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參數(shù)資料
| 型號(hào)： | TC58FVB160AFT-70 |
| 廠商： | Toshiba Corporation |
| 英文描述： | 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
| 中文描述： | 16兆位（2米× 8位/ 1米× 16位）的CMOS閃存 |
| 文件頁數(shù)： | 1/41頁 |
| 文件大?。?/td> | 539K |
| 代理商： | TC58FVB160AFT-70 |
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TC58FVT160/B160AFT/AXB-70,-10
2001-09-05 1/41
Block erase architecture
1
×
16 Kbytes / 2
×
8 Kbytes
1
×
32 Kbytes / 31
×
64 Kbytes
Boot block architecture
TC58FVT160AFT/AXB: top boot block
TC58FVB160AFT/AXB: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access time
70 ns
(C
L
: 30 pF)
100 ns
(C
L
: 100 pF)
Power consumption
5
μ
A
(Standby)
30 mA
(Read operation)
15 mA
(Program/Erase operations)
Package
TSOPI48-P-1220-0.50 (weight: 0.51 g)
P-TFBGA48-0608-0.80AZ (weight: TBD)
TENTATIVE
16-MBIT (2M
×
8 BITS
/
1M
×
16 BITS) CMOS FLASH MEMORY
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 2,097,152 words
×
8 bits or as 1,048,576 words
×
16 bits. The TC58FVT160/B160A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip.
FEATURES
Power supply voltage
V
DD
=
2.7 V~3.6 V
Operating temperature
Ta
=
40
°
C~85
°
C
Organization
2M
×
8 bits / 1M
×
16 bits
Functions
Auto Program, Auto Erase
Fast Program Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
PIN ASSIGNMENT
(TOP VIEW)
TC58FVT160/B160AFT
PIN NAMES
A-1, A0~A19 Address Input
DQ0~DQ15
Data Input/Output
CE
Chip Enable Input
OE
Output Enable Input
BYTE
Word/Byte Select Input
WE
Write Enable Input
BY
/
RY
Ready/Busy Output
RESET
Hardware Reset Input
NC
Not Connected
V
DD
Power Supply
V
SS
Ground
BYTE
V
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
V
SS
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
OE
CE
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
NC
BY
/
A17
A7
A6
A5
A4
A3
A2
A1
RESET
RY
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
000707EBA2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC58FVB160FT | 16 MBIT CMOS FLASH MEMORY |
| TC58FVB160AFT-10 | 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
| TC58FVB160AF | 16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
| TC58FVB160FT-10 | 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY |
| TC58FVB160FT-12 | 16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC58FVB160AFTG-70 | 功能描述:IC FLASH 16MBIT 70NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| TC58FVB160AXB | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVB160AXB-10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVB160AXB-70 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVB160FT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:16 MBIT CMOS FLASH MEMORY |
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