參數(shù)資料
型號: TC58FVB641XB-70
廠商: Toshiba Corporation
英文描述: 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
中文描述: 64兆位(分】8位/ 4分】16位)的CMOS閃存
文件頁數(shù): 1/53頁
文件大小: 593K
代理商: TC58FVB641XB-70
TC58FVT641/B641FT/XB-70,-10
2001-09-06 1/53
Block erase architecture
8
×
8 Kbytes / 127
×
64 Kbytes
Boot block architecture
TC58FVT641FT/XB: top boot block
TC58FVB641FT/XB: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access time
70 ns
(C
L
: 30 pF)
100 ns (C
L
: 100 pF)
Power consumption
10
μ
A (Standby)
30 mA (Read operation)
15 mA (Program/Erase operations)
Package
TSOPI48-P-1220-0.50 (weight: 0.52 g)
P-TFBGA63-0911-0.80AZ (Weight: TBD)
TENTATIVE
64-MBIT (8M
×
8 BITS / 4M
×
16 BITS) CMOS FLASH MEMORY
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory
organized as 8,388,608 words
×
8 bits or as 4,194,304 words
×
16 bits. The TC58FVT641/B641 features commands
for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based
on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVT641/B641 also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES
Power supply voltage
V
DD
=
2.7 V~3.6 V
Operating temperature
Ta
=
40
°
C~85
°
C
Organization
8M
×
8 bits / 4M
×
16 bits
Functions
Simultaneous Read/Write
Auto Program, Auto Erase
Fast Program Mode / Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EBA1
相關PDF資料
PDF描述
TC58FVB641FTXB-10 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
TC58FVB641FTXB-70 64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
TC58FVM5T2AFT65 Ring Tongue Solderless Terminal; Wire Size (AWG):16-14; Stud Size:#6; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
TC58FVM5B2AFT65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVM5B2AXB65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
相關代理商/技術參數(shù)
參數(shù)描述
TC58FVB800F 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
TC58FVB800FT85 制造商:TOSHIBA 功能描述:New
TC58FVM5B2AFT65 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVM5B2ATG65BAH 制造商:Toshiba America Electronic Components 功能描述:
TC58FVM5B2ATG65CAH 功能描述:IC FLASH 32MBIT 65NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M(64M x 8) 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040