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參數(shù)資料
| 型號(hào)： | TC58FVM5T3AFT65 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Ring Tongue Solderless Terminal; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| 中文描述： | 東芝馬鞍山數(shù)字集成電路硅柵CMOS |
| 文件頁數(shù)： | 1/63頁 |
| 文件大?。?/td> | 799K |
| 代理商： | TC58FVM5T3AFT65 |
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TC58FVM5(T/B)(2/3)A(FT/XB)65
2003-01-29 1/63
Organization of
４
Banks
Rate of Size
BK0
BK1
BK2
BK3
TC58FVM5T2A
1
3
3
1
TC58FVM5B2A
1
3
3
1
TC58FVM5T3A
3
3
1
1
TC58FVM5B3A
1
1
3
3
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access Time (Random/Page)
V
DD
CL
=
30 pF
CL
=
100 pF
2.7~3.6 V
65 ns/25 ns
70 ns/30 ns
2.3~3.6 V
70 ns/30 ns
75 ns/35 ns
Power consumption
10
μ
A (Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
5 mA (Page Read operation)
11 mA (Address Increment Read operation)
Package
TC58FVM5
**
AFT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVM5
**
AXB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
32MBIT (4M
×
8 BITS/2M
×
16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
DESCRIPTION
The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
flash memory organized as 4194304 words
×
8 bits or as 2097152 words
×
16 bits. The TC58FVM5T2A/B2A/T3A/B3
A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The
commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the
chip. The TC58FVM5T2A/B2A/T3A/B3A also features a Simultaneous Read/Write operation so that data can be
read during a Write or Erase operation.
FEATURES
Power supply voltage
V
DD
=
2.3 V~3.6 V
Operating temperature
Ta
=
40
°
C~85
°
C
Organization
4M
×
8 bits/2M
×
16 bits
Functions
Simultaneous Read/Write
Page Read
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
Block erase architecture
8
×
8 Kbytes/63
×
64 Kbytes
Boot block architecture
TC58FVM5T2A/3A: top boot block
TC58FVM5B2A/3A: bottom boot block
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TC58FVM5T3AXB65 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVM6T2AFT65 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVM6T2AXB65 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVM62A | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVM6B2AFT65 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TC58FVM5T3AXB65 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVM62A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVM6B2A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVM6B2AFT65 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TC58FVM6B2ATG65 | 制造商:Toshiba America Electronic Components 功能描述:Flash Mem Parallel 2.5V/3V/3.3V 64M-Bit 8M x 8/4M x 16 65ns 48-Pin TSOP-I |
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