參數(shù)資料
型號： TC58FVM6T2AFT65
廠商： Toshiba Corporation
英文描述： TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
中文描述： 東芝馬鞍山數(shù)字集成電路硅柵CMOS
文件頁數(shù)： 1/61頁
文件大?。?/td> 754K
代理商： TC58FVM6T2AFT65
TC58FVM6(T/B)2A(FT/XB)65
2003-01-29 1/61
Block erase architecture
8
×
8 Kbytes/127
×
64 Kbytes
Boot block architecture
TC58FVM6T2A: top boot block
TC58FVM6B2A: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access Time (Random/Page)
V
DD
CL = 30 pF
CL = 100 pF
2.7~3.6 V
65 ns/25 ns
70 ns/30 ns
2.3~3.6 V
70 ns/30 ns
75 ns/35 ns
Power consumption
10
μ
A (Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
11 mA (Address Increment Read operation)
5 mA
(Page Read operation)
Package
TC58FVM6
**
AFT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVM6
**
AXB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
64MBIT (8M
×
8 BITS/4M
×
16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
DESCRIPTION
The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 8388608 words
×
8 bits or as 4194304 words
×
16 bits. The TC58FVM6T2A/B2A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES
Power supply voltage
V
DD
=
2.3 V~3.6 V
Operating temperature
Ta
=
40
°
C~85
°
C
Organization
8M
×
8 bits/4M
×
16 bits
Functions
Simultaneous Read/Write
Page Read
Auto Program, Auto Page Program
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
相關(guān)PDF資料
PDF描述
TC58FVM6T2AXB65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVM62A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVM6B2AFT65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVM6B2AXB65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVM7B2 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC58FVM6T2ATG65 制造商:Toshiba America Electronic Components 功能描述:Flash Mem Parallel 2.5V/3V/3.3V 64M-Bit 8M x 8/4M x 16 65ns 48-Pin TSOP-I
TC58FVM6T2ATG-65 功能描述:IC FLASH 64MBIT 65NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
TC58FVM6T2AXB65 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TC58FVM6T5BTG65 功能描述:IC FLASH 64MBIT 65NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
TC58FVM7B2 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
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