| 型號(hào) | 廠(chǎng)商 | 描述 |
| tc7sg02fe 2 3 4 5 6 |
Toshiba Corporation | 2 Input NOR Gate |
| tc7sg02fu 2 3 4 5 6 |
Toshiba Corporation | 2 Input NOR Gate |
| tc7sg04afs 2 3 4 5 6 |
Toshiba Corporation | Inverter |
| tc7sg04fe 2 3 4 5 6 |
Toshiba Corporation | Inverter |
| tc7sg04fu 2 3 4 5 6 |
Toshiba Corporation | Inverter |
| tc7sg08afs 2 3 4 5 6 |
Toshiba Corporation | TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic |
| tc7sg08fe 2 3 4 5 6 |
Toshiba Corporation | 2 Input AND Gate |
| tc7sg08fu 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 13.2 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg125afs 2 3 4 5 6 7 8 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 14.1 to 15.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg125fe 2 3 4 5 6 7 8 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 15.3 to 17.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg125fu 2 3 4 5 6 7 8 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 16.9 to 19.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg126fe 2 3 4 5 6 7 8 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 18.8 to 21.1; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg126fu 2 3 4 5 6 7 8 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 20.9 to 23.3; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg14afs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 22.9 to 25.5; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg14fe 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 25.2 to 28.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg14fu 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 1.9 to 2.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg17afs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg17fe 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 28.2 to 31.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg17fu 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 31.2 to 34.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg32afs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 34.2 to 38.0; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg32fe 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg32fu 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 2.8 to 3.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg34afs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg34fe 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 3.7 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg34fu 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 3.4 to 3.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg86afs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.0 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg86fe 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.3 to 4.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sg86fu 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.6 to 5.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sgu04afs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 4.9 to 5.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sgu04fe 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 5.2 to 5.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sh00fe 2 3 4 5 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 5.5 to 6.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sh00fs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 5.8 to 6.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sh00 2 3 4 5 |
Toshiba Corporation | 2-INPUT NAND GATE |
| tc7sh00f 2 3 4 5 |
Toshiba Corporation | 2-INPUT NAND GATE |
| tc7sh00fu 2 3 4 5 |
Toshiba Corporation | 2-INPUT NAND GATE |
| tc7sh02fe 2 3 4 5 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 6.3 to 6.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sh02fs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 6.7 to 7.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sh02 2 3 4 5 |
Toshiba Corporation | 2-INPUT NOR GATE |
| tc7sh02f 2 3 4 5 |
Toshiba Corporation | 2-INPUT NOR GATE |
| tc7sh02fu 2 3 4 5 |
Toshiba Corporation | 2-INPUT NOR GATE |
| tc7sh04fe 2 3 4 5 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.2 to 7.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sh04fs 2 3 4 5 6 |
Toshiba Corporation | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.7 to 8.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| tc7sh04f 2 3 4 5 |
Toshiba Corporation | INVERTER |
| tc7sh04fu 2 3 4 5 |
Toshiba Corporation | INVERTER |
| tc7sh08 2 3 4 5 |
Toshiba Corporation | 2-INPUT AND GATE |
| tc7sh08f 2 3 4 5 |
Toshiba Corporation | 2-INPUT AND GATE |
| tc7sh08fu 2 3 4 5 |
Toshiba Corporation | 2-INPUT AND GATE |
| tc7sh14f 2 3 4 5 |
Toshiba Corporation | SCHMITT INVERTER |
| tc7sh14fu 2 3 4 5 |
Toshiba Corporation | SCHMITT INVERTER |
| tc7sh32 2 3 4 5 |
Toshiba Corporation | 2-INPUT OR GATE |