參數(shù)資料
型號(hào)： TC7SG08FE
廠商： Toshiba Corporation
英文描述： 2 Input AND Gate
中文描述： 二輸入與門
文件頁數(shù)： 1/6頁
文件大小： 173K
代理商： TC7SG08FE
TC7SG08FE
2007-11-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG08FE
2 Input AND Gate
Features
High-level output current:
at V
CC
= 3.0 V
High-speed operation: t
pd
= 2.5 ns (typ.)
at V
CC
= 3.3 V,15pF
Operating voltage range: V
CC
= 0.9~3.6 V
5.5-V tolerant inputs.
3.6-V power down protection output.
Marking Pin Assignment (top view)
I
OH
/I
OL
= ±8 mA (min)
Absolute Maximum Ratings
(Ta = 25°C)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V
CC
= 0V
Note 2: High or Low State. I
OUT
abusolute maximum rating must be observed.
Note 3: V
OUT
< GND
(ESV)
Weight: 0.003 g (typ.)
Characteristics
Symbol
Value
Unit
Power supply voltage
V
CC
0.5~4.6
V
DC input voltage
V
IN
0.5~7.0
V
0.5~4.6 (Note 1)
DC output voltage
V
OUT
0.5~V
CC
+
0.5 (Note 2)
V
Input diode current
I
IK
20
mA
Output diode current
I
OK
20
(Note 3)
mA
DC output current
I
OUT
±25
mA
DC V
CC
/ground current
I
CC
±50
mA
Power dissipation
P
D
150
mW
Storage temperature
T
stg
65~150
°C
Product name
W 2
IN A
GND
IN B
1
2
3
5
4
V
CC
OUT Y
相關(guān)PDF資料
PDF描述
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TC7SG125AFS Zener Diode; Application: General; Pd (mW): 500; Vz (V): 14.1 to 15.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: LLD
TC7SG125FE Zener Diode; Application: General; Pd (mW): 500; Vz (V): 15.3 to 17.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: LLD
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TC7SG126FE Zener Diode; Application: General; Pd (mW): 500; Vz (V): 18.8 to 21.1; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: LLD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TC7SG08FE(TE85L,F) 功能描述:邏輯門 2-Input AND Gate 5Pin RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
TC7SG08FE_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG08FU 功能描述:邏輯門 2-Input AND Gate 5Pin RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
TC7SG08FU(BRA,F) 制造商:Toshiba 功能描述:7SG AND Bulk
TC7SG08FU(TE85L,F) 功能描述:邏輯門 2-Input AND Gate 5Pin RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel
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