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參數資料
| 型號： | TC7SG08FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 500; Vz (V): 13.2 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD |
| 中文描述： | 二輸入與門 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 177K |
| 代理商： | TC7SG08FU |
TC7SG08FU
2007-11-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG08FU
2 Input AND Gate
Features
High-level output current:
at V
CC
= 3.0 V
High-speed operation: t
pd
= 2.5 ns (typ.)
at V
CC
= 3.3 V,15pF
Operating voltage range: V
CC
= 0.9~3.6 V
5.5-V tolerant inputs.
3.6-V power down protection output.
Marking Pin Assignment (top view)
I
OH
/I
OL
= ±8 mA (min)
Absolute Maximum Ratings
(Ta = 25°C)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V
CC
= 0V
Note 2: High or Low State. I
OUT
abusolute maximum rating must be observed.
Note 3: V
OUT
< GND
(USV)
Weight: 0.006 g (typ.)
Characteristics
Symbol
Value
Unit
Power supply voltage
V
CC
0.5~4.6
V
DC input voltage
V
IN
0.5~7.0
V
0.5~ 4.6 (Note 1)
DC output voltage
V
OUT
0.5~ V
CC
+ 0.5 (Note 2)
V
Input diode current
I
IK
20
mA
Output diode current
I
OK
20
(Note 3)
mA
DC output current
I
OUT
±25
mA
DC V
CC
/ground current
I
CC
±50
mA
Power dissipation
P
D
200
mW
Storage temperature
T
stg
65~150
°C
Product name
W 2
IN A
GND
IN B 1
2
3
5
4
V
CC
OUT Y
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|---|---|
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