參數(shù)資料
型號: TC7SG14FE
廠商: Toshiba Corporation
英文描述: Zener Diode; Application: General; Pd (mW): 500; Vz (V): 25.2 to 28.6; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD
中文描述: 施密特逆變器
文件頁數(shù): 1/6頁
文件大小: 153K
代理商: TC7SG14FE
TC7SG14FE
2007-11-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG14FE
Schmitt Inverter
Features
High-level output current:
at V
CC
= 3.0 V
High-speed operation: t
pd
= 3.7 ns (typ.)
at V
CC
= 3.3 V,15pF
Operating voltage range: V
CC
= 0.9~3.6 V
5.5-V tolerant input.
3.6-V power down protection output.
Marking
I
OH
/I
OL
= ±8 mA (min)
Pin Assignment (top view)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Value
Unit
Power supply voltage
V
CC
0.5~4.6
V
DC input voltage
V
IN
0.5~7.0
V
0.5~4.6 (Note 1)
DC output voltage
V
OUT
0.5~V
CC
+
0.5 (Note 2)
V
Input diode current
I
IK
20
mA
Output diode current
I
OK
20
(Note 3)
mA
DC output current
I
OUT
±25
mA
DC V
CC
/ground current
I
CC
±50
mA
Power dissipation
P
D
150
mW
Storage temperature
T
stg
65~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low State. IOUT abusolute maximum rating must be observed.
Note 3: VO
UT
< GND
(ESV)
Weight: 0.003 g (typ.)
Product name
W A
IN A
GND
NC
1
2
3
5
4
V
CC
OUT Y
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