- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376554 > DA28F160S5-70 (INTEL CORP) 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor PDF資料下載
參數(shù)資料
| 型號(hào)： | DA28F160S5-70 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 2M X 8 FLASH 5V PROM, 70 ns, PDSO56 |
| 封裝： | 16 X 23.70 MM, SSOP-56 |
| 文件頁數(shù)： | 26/50頁 |
| 文件大?。?/td> | 1220K |
| 代理商： | DA28F160S5-70 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁當(dāng)前第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁
28F160S5, 28F320S5
E
26
ADVANCE INFORMATION
This two-step command sequence of setup followed
by execution ensures that block contents are not
accidentally erased. An invalid Full Chip Erase
command sequence will result in both Status
Register bits SR.4 and SR.5 being set to 1. Also,
reliable full chip erasure can only occur when
V
CC
= V
CC1/2
and V
PP
= V
PPH
.
In the absence these
voltages, block contents are protected against
erasure.
If full chip erase is attempted while V
PP
≤
V
PPLK
, SR.3 and SR.5 will be set to 1.
When WP# =
V
IL
, only unlocked blocks are erased.
Full chip
erase cannot be suspended.
4.8
Write to Buffer Command
To program the flash device via the write buffers, a
Write to Buffer command sequence is initiated. A
variable number of bytes or words, up to the buffer
size, can be written into the buffer and programmed
to the flash device. First, the Write to Buffer setup
command is issued along with the Block Address.
At this point, the eXtended Status Register
information is loaded and XSR.7 reverts to the
“buffer available” status. If XSR.7 = 0, no write
buffer is available. To retry, continue monitoring
XSR.7 by issuing the Write to Buffer setup
command with the Block Address until XSR.7 = 1.
When XSR.7 transitions to a “1,” the buffer is ready
for loading.
Now a Word/Byte count is issued at an address
within the block. On the next write, a device start
address is given along with the write buffer data.
For maximum programming performance and lower
power, align the start address at the beginning of a
Write Buffer boundary. Subsequent writes must
supply additional device addresses and data,
depending on the count. All subsequent addresses
must lie within the start address plus the count.
After the final buffer data is given, a Write Confirm
command is issued. This initiates the WSM to begin
copying the buffer data to the flash memory. If a
command other than Write Confirm is written to the
device, an “Invalid Command/Sequence” error will
be generated and Status Register bits SR.5 and
SR.4 will be set to “1.” For additional buffer writes,
issue another Write to Buffer setup command and
check XSR.7. The write buffers can be loaded while
the WSM is busy as long as XSR.7 indicates that a
buffer is available. Refer to Figure 6 for the Write to
Buffer flowchart.
If an error occurs while writing, the device will stop
programming, and Status Register bit SR.4 will be
set to a “1” to indicate a program failure. Any time a
media failure occurs during a program or an erase
(SR.4 or SR.5 is set), the device will not accept any
more Write to Buffer commands. Additionally, if the
user attempts to write past an erase block boundary
with a Write to Buffer command, the device will
abort programming. This will generate an “Invalid
Command/Sequence” error and Status Register bits
SR.5 and SR.4 will be set to “1.” To clear SR.4
and/or SR.5, issue a Clear Status Register
command.
Reliable buffered programming can only occur
when V
CC
= V
CC1/2
and V
PP
= V
PPH
. If programming
is attempted while V
≤
V
, Status Register bits
SR.4 and SR.5 will be set to “1.” Programming
attempts with invalid V
and V
voltages produce
spurious results and should not be attempted.
Finally, successful programming requires that the
corresponding Block Lock-Bit be cleared, or WP# =
V
IH
. If a buffered write is attempted when the
corresponding Block Lock-Bit is set and WP# = V
IL
,
SR.1 and SR.4 will be set to “1.”
4.9
Byte/Word Program Command
Byte/Word programming is executed by a two-cycle
command sequence. Byte/Word Program setup
(standard 40H or alternate 10H) is written, followed
by a second write that specifies the address and
data (latched on the rising edge of WE#). The WSM
then takes over, controlling the program and verify
algorithms internally. After the write sequence is
written, the device automatically outputs Status
Register data when read. The CPU can detect the
completion of the program event by analyzing STS
in level RY/BY# mode or Status Register bit SR.7.
When programming is complete, Status Register bit
SR.4 should be checked. If a programming error is
detected, the Status Register should be cleared.
The internal WSM verify only detects errors for “1”s
that do not successfully program to “0”s. The CUI
remains in read Status Register mode until it
receives another command. Refer to Figure 7 for
the Word/Byte Program flowchart.
Also, Reliable byte/word programming can only
occur when V
CC
= V
CC1/2
and V
PP
= V
PPH
.
In the
absence of this high voltage, contents are protected
against programming.
If a byte/word program is
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DA30 | DIAC (BIDIRECTIONAL DIODE THYRISTOR)|36V V(BO) MAX|100A I(S)|DO-204AL |
| DA60 | DIAC (BIDIRECTIONAL DIODE THYRISTOR)|70V V(BO) MAX|100A I(S)|DO-204AL |
| DA3N | COMMON ANODE DIODE ARRAY|SIP |
| DA4N | COMMON ANODE DIODE ARRAY|SIP |
| DA4P | COMMON CATHODE DIODE ARRAY|SIP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DA28F320J5-120 | 制造商:Intel 功能描述: 制造商:Intel 功能描述:NOR Flash, 2M x 16, 56 Pin, Plastic, SOP |
| DA28F320J5A120 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| DA28F320J5A-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:5 Volt Intel StrataFlash? Memory |
| DA28F320S5-110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
| DA28F320S5-90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:WORD-WIDE FlashFile MEMORY FAMILY |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。