
CYRF6936
Document #: 38-16015 Rev. *G
Page 31 of 40
Absolute Maximum Ratings
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with Power Applied..–55°C to +125°C
Supply Voltage on any power supply pin
relative to V
SS
................................................–0.3V to +3.9V
DC Voltage to Logic Inputs
[5]
...................–0.3V to V
IO
+0.3V
DC Voltage applied to Outputs
in High-Z State.........................................–0.3V to V
IO
+0.3V
Static Discharge Voltage (Digital)
[6]
............................>2000V
Static Discharge Voltage (RF)
[6]
................................. 1100V
Latch Up Current.....................................+200 mA, –200 mA
Operating Conditions
V
CC
.....................................................................2.4V to 3.6V
V
IO
......................................................................1.8V to 3.6V
V
BAT
....................................................................1.8V to 3.6V
T
A
(Ambient Temperature Under Bias)............. 0°C to +70°C
Ground Voltage..................................................................0V
F
OSC
(Crystal Frequency)............................12MHz ±30 ppm
Notes
5. It is permissible to connect voltages above V
IO
to inputs through a series resistor limiting input current to 1 mA. AC timing not guaranteed.
6. Human Body Model (HBM).
7. V
depends on battery input voltage.
8. In sleep mode, the I/O interface voltage reference is V
BAT
.
9. In sleep mode, V
min. can go as low as 1.8V.
10.Includes current drawn while starting crystal, starting synthesizer, transmitting packet (including SOP and CRC16), changing to receive mode, and receiving
ACK handshake. Device is in sleep except during this transaction.
11. ISB is not guaranteed if any I/O pin is connected to voltages higher than V
IO
.
DC Characteristics
(T = 25
°
C, V
BAT
= 2.4V, PMU disabled, f
OSC
= 12.000000MHz)
Parameter
V
BAT
V
REG[7]
V
REG[7]
V
IO[8]
V
CC
V
OH1
V
OH2
V
OL
V
IH
V
IL
I
IL
C
IN
I
CC
(GFSK)
[10]
I
CC
(32-8DR)
[10]
Average TX I
CC
, 250 kbps, fast channel PA = 5, 2 way, 4 bytes/10 ms
I
SB[11]
Sleep Mode I
CC
I
SB[11]
Sleep Mode I
CC
IDLE I
CC
Radio off, XTAL Active
I
synth
I
CC
during Synth Start
TX I
CC
I
CC
during Transmit
TX I
CC
I
CC
during Transmit
TX I
CC
I
CC
during Transmit
RX I
CC
I
CC
during Receive
RX I
CC
I
CC
during Receive
Boost Eff
PMU Boost Converter Efficiency
Description
Conditions
Min
1.8
2.4
2.7
1.8
2.4
[9]
V
IO
– 0.2
V
IO
– 0.4
Typ
Max
3.6
Unit
V
V
V
V
V
V
V
V
V
V
μA
pF
mA
mA
μA
μA
mA
mA
mA
mA
mA
mA
mA
%
Battery Voltage
PMU Output Voltage
PMU Output Voltage
V
IO
Voltage
V
CC
Voltage
Output High Voltage Condition 1
Output High Voltage Condition 2
Output Low Voltage
Input High Voltage
Input Low Voltage
Input Leakage Current
Pin Input Capacitance
Average TX I
CC
, 1 Mbps, slow channel PA = 5, 2 way, 4 bytes/10 ms
0–70
°
C
2.4V mode
2.7V mode
2.43
2.73
3.6
3.6
0–70
°
C
At I
OH
= –100.0 μA
At I
OH
= –2.0 mA
At I
OL
= 2.0 mA
V
IO
V
IO
0
0.45
V
IO
0.3V
IO
+1
10
0.7V
IO
0
–1
0 < V
IN
< V
IO
except XTAL, RF
N
, RF
P
, RF
BIAS
0.26
3.5
0.87
1.2
0.8
31.4
1.0
8.4
20.8
26.2
34.1
18.4
21.2
81
10
PMU enabled
XOUT disabled
PA = 5 (–5 dBm)
PA = 6 (0 dBm)
PA = 7 (+4 dBm)
LNA off, ATT on
LNA on, ATT off
V
BAT
= 2.5V, V
REG
= 2.73V,
I
LOAD
= 20 mA
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