參數(shù)資料
型號(hào)： CY7C1313BV18
廠商： Cypress Semiconductor Corp.
英文描述： 18-Mbit QDR-II SRAM 4-Word Burst Architecture(4字Burst結(jié)構(gòu),18-Mbit QDR-II SRAM)
中文描述： 18兆位QDR - II型SRAM的4字突發(fā)架構(gòu)（4字突發(fā)結(jié)構(gòu),18 - Mbit的QDR - II型的SRAM）
文件頁(yè)數(shù)： 11/28頁(yè)
文件大?。?/td> 459K
代理商： CY7C1313BV18
CY7C1311BV18
CY7C1911BV18
CY7C1313BV18
CY7C1315BV18
Document Number: 38-05620 Rev. *C
Page 11 of 28
Write Cycle Descriptions
(CY7C1315BV18)
[2, 10]
BWS
0
BWS
1
BWS
2
BWS
3
L
L
K
K
Comments
L
L
L–H
–
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are written
into the device.
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are written
into the device.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is written
into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is written
into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is written into
the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is written into
the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is written
into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is written
into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written
into the device. D
[26:0]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written
into the device. D
[26:0]
will remain unaltered.
No data is written into the device during this portion of a write operation.
No data is written into the device during this portion of a write operation.
L
L
L
L
–
L–H
L
H
H
H
L–H
–
L
H
H
H
–
L–H
H
L
H
H
L–H
–
H
L
H
H
–
L–H
H
H
L
H
L–H
–
H
H
L
H
–
L–H
H
H
H
L
L–H
H
H
H
L
–
L–H
H
H
H
H
H
H
H
H
L–H
–
–
L–H
Write Cycle Descriptions
(CY7C1911BV18)
[2, 10]
BWS
0
L
L
H
H
K
K
–
L–H
–
L–H
–
During the Data portion of a Write sequence, the single byte (D
[8:0]
) is written into the device.
During the Data portion of a Write sequence, the single byte (D
[8:0]
) is written into the device.
No data is written into the device during this portion of a write operation.
No data is written into the device during this portion of a write operation.
L–H
–
L–H
相關(guān)PDF資料
PDF描述
CY7C1315BV18 18-Mbit QDR-II SRAM 4-Word Burst Architecture(4字Burst結(jié)構(gòu),18-Mbit QDR-II SRAM)
CY7C1318AV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture(18-Mb DDR-II SRAM（2-Word Burst結(jié)構(gòu)）)
CY7C1316AV18 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1316AV18-167BZC 18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1318AV18-200BZC 18-Mbit DDR-II SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1313BV18-167BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 1.8V COM QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1313BV18-167BZCT 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 1.8V COM QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1313BV18-167BZXC 制造商:Cypress Semiconductor 功能描述:
CY7C1313BV18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 1.8V COM QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1313BV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 1.8V COM QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*