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參數(shù)資料
| 型號： | CXK77B1841AGB |
| 廠商： | Sony Corporation |
| 英文描述： | 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (128K x 36位)) |
| 中文描述： | 4Mb的后寫入LVTTL高速同步SRAM（128K的x 36Bit）（4分位，寫延遲，LVTTL高速同步靜態(tài)隨機存儲器（128K的× 36位）） |
| 文件頁數(shù)： | 3/28頁 |
| 文件大?。?/td> | 222K |
| 代理商： | CXK77B1841AGB |
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4Mb, Sync LW, LVTTL, rev 1.2
3 / 28
September 24, 1998
SONY
CXK77B3641AGB / CXK77B1841AGB
Preliminary
256K x 18 Pin Assignment (Top View)
Notes:
1a. Pad Location 4T is a true no-connect. However, it is defined as an SA address input in x36 LW SRAMs.
1b. Pad Locations 2D, 7D, 1E, 6E, 2F, 1G, 6G, 2H, 7H, 1K, 6K, 2L, 7L, 6M, 2N, 7N, 1P, and 6P are true no-connects.
However, they are defined as DQ data inputs / outputs in x36 LW SRAMs.
2. Pad Location 6B is a true no-connect. However, it is defined as an SA address input in 8Mb and 16Mb LW SRAMs.
3. Pad Location 2B is a true no-connect. However, it is defined as an SA address input in 16Mb LW SRAMs.
4. Pad Location 4D is a true no-connect. However, it is defined as a ZQ output impedance control resister input in
HSTL LW SRAMs.
5. Pad Locations 3J and 5J are true no-connects. However, they are defined as V
REF
input reference voltage inputs in
HSTL LW SRAMs.
1
2
3
4
5
6
7
A
V
DDQ
SA6
SA7
NC
SA3
SA2
V
DDQ
B
NC
NC
(3)
SA8
NC
SA4
NC
(2)
NC
C
NC
SA12
SA5
V
DD
SA0
SA13
NC
D
DQ0b
NC
(1b)
V
SS
NC
(4)
V
SS
DQ8a
NC
(1b)
E
NC
(1b)
DQ1b
V
SS
SS
V
SS
NC
(1b)
DQ7a
F
V
DDQ
NC
(1b)
V
SS
G
V
SS
DQ6a
V
DDQ
G
NC
(1b)
DQ2b
SBWb
C
V
SS
NC
(1b)
DQ5a
H
DQ3b
NC
(1b)
V
SS
C
V
SS
DQ4a
NC
(1b)
J
V
DDQ
V
DD
NC
(5)
V
DD
NC
(5)
V
DD
V
DDQ
K
NC
(1b)
DQ4b
V
SS
K
V
SS
NC
(1b)
DQ3a
L
DQ5b
NC
(1b)
V
SS
K
SBWa
DQ2a
NC
(1b)
M
V
DDQ
DQ6b
V
SS
SW
V
SS
NC
(1b)
V
DDQ
N
DQ7b
NC
(1b)
V
SS
SA14
V
SS
DQ1a
NC
(1b)
P
NC
(1b)
DQ8b
V
SS
SA11
V
SS
NC
(1b)
DQ0a
R
NC
SA10
M1
V
DD
M2
SA15
NC
T
NC
SA17
SA9
NC
(1a)
SA1
SA16
ZZ
U
V
DDQ
TMS
TDI
TCK
TDO
NC
V
DDQ
相關PDF資料 |
PDF描述 |
|---|---|
| CXK77B3641AGB | 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
| CXK77B1841GB | 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) |
| CXK77B3611AGB- | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-5 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-6 | High Speed Bi-CMOS Synchronous Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B1841GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B1841GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B3610AGB-5R | 制造商:Sony Batteries 功能描述:77B3610AGB-5R |
| CXK77B3610GB- | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3610GB-6 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
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