參數(shù)資料
型號: CXK77B1841AGB
廠商: Sony Corporation
英文描述: 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (128K x 36位))
中文描述: 4Mb的后寫入LVTTL高速同步SRAM(128K的x 36Bit)(4分位,寫延遲,LVTTL高速同步靜態(tài)隨機(jī)存儲器(128K的× 36位))
文件頁數(shù): 11/28頁
文件大?。?/td> 222K
代理商: CXK77B1841AGB
4Mb, Sync LW, LVTTL, rev 1.2
11 / 28
September 24, 1998
SONY
CXK77B3641AGB / CXK77B1841AGB
Preliminary
DC Electrical Characteristics
(V
DD
= 3.3V
±
5%, V
SS
= 0V, T
A
= 0 to 85
o
C)
1. Typical I
DD
values measured at V
DD
= 3.3V and T
A
= 25
o
C, with a 75% read / 25% write operation distribution.
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input Leakage Current
I
LI
I
LO
V
IN
= V
SS
to V
DD
V
OUT
= V
SS
to V
DD
G = V
IH
I
OUT
= 0 mA
SS = V
IL
, ZZ = V
IL
-1
---
1
uA
Output Leakage Current
-10
---
10
uA
Power Supply
Operating Current - x36
I
DD-5.0
I
DD-4.5
I
DD-4.0
I
DD-3.6
I
DD-3.3
I
DD-5.0
I
DD-4.5
I
DD-4.0
I
DD-3.6
I
DD-3.3
I
SB
---
665
695
725
755
785
---
mA
Power Supply
Operating Current - x18
I
OUT
= 0 mA
SS = V
IL
, ZZ = V
IL
---
595
625
655
685
715
---
mA
Power Supply
Standby Current
I
OUT
= 0 mA
ZZ = V
IH
I
OH
= -6.0 mA
---
60
---
mA
Output High Voltage
for V
DDQ
= 3.3V
Output Low Voltage
for V
DDQ
= 3.3V
Output High Voltage
for V
DDQ
= 2.5V
Output Low Voltage
for V
DDQ
= 2.5V
V
OH
2.4
---
---
V
V
OL
I
OL
= 6.0 mA
---
---
0.4
V
V
OH
I
OH
= -6.0 mA
2.0
---
---
V
V
OL
I
OL
= 6.0 mA
---
---
0.4
V
相關(guān)PDF資料
PDF描述
CXK77B3641AGB 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)(HSTL)、高速同步靜態(tài)RAM (128K x 36位))
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