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參數(shù)資料
| 型號(hào)： | CXK77B3611AGB-6 |
| 廠商： | Sony Corporation |
| 英文描述： | High Speed Bi-CMOS Synchronous Static RAM |
| 中文描述： | 高速雙CMOS同步靜態(tài)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | CXK77B3611AGB-6 |
Description
The CXK77B3611AGB-5/6 is a high speed 1M bit
Bi-CMOS synchronous static RAM organized as
32768 words by 36 bits. This SRAM integrates input
registers, high speed SRAM and write buffer onto a
single monolithic IC and features the delayed write
system to reduce the dead cycles.
Features
Fast cycle time
CXK77B3611AGB-5
(Cycle)
5ns
6ns
(Frequency)
200MHz
167MHz
-6
Inputs and outputs are GTL/HSTL compatible
Controlled Impedance Driver
Single 3.3V power supply: 3.3V±0.15V
Byte-write possible
OE asynchronization
JTAG test circuit
Package 119TBGA
4 kinds of synchronous operation mode
Register-Register mode (R-R mode)
Register-Flow Thru mode (R-F mode)
Register-Latch mode (R-L mode)
Dual clock mode (D-C mode)
Function
32768 word x 36bit High Speed Bi-CMOS Synchronous SRAM
Structure
Silicon gate Bi-CMOS IC
– 1 –
CXK77B3611AGB
-5/6
High Speed Bi-CMOS Synchronous Static RAM
For the availability of this product, please contact the sales office.
119 pin BGA (Plastic)
PE96812
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Preliminary
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CXK77B3611AGB | High Speed 1MBit Bi-CMOS Synchronous Static RAM(高速1M位、Bi-CMOS同步靜態(tài)RAM) |
| CXK77B3640AGB | 4Mb Late Write HSTL High Speed Synchronous SRAM(128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
| CXK77B1840AGB | 4Mb Late Write HSTL High Speed Synchronous SRAM(256K x 18Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (256K x 18位)) |
| CXK77B3641GB | 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (128K x 36位)) |
| CXK77V3211Q-12 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Red; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B3640GB-45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77B3640GB-4A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77B3641GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77B3641GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77K18R320GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18) |
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