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參數(shù)資料
| 型號： | CXK77B1841AGB |
| 廠商： | Sony Corporation |
| 英文描述： | 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (128K x 36位)) |
| 中文描述： | 4Mb的后寫入LVTTL高速同步SRAM（128K的x 36Bit）（4分位，寫延遲，LVTTL高速同步靜態(tài)隨機存儲器（128K的× 36位）） |
| 文件頁數(shù)： | 12/28頁 |
| 文件大小： | 222K |
| 代理商： | CXK77B1841AGB |
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4Mb, Sync LW, LVTTL, rev 1.2
12 / 28
September 24, 1998
SONY
CXK77B3641AGB / CXK77B1841AGB
Preliminary
AC Electrical Characteristics (Register - Register Mode
)
1. All parameters are specified over the range T
A
= 0 to 85
o
C.
2. These parameters are sampled and are not 100% tested.
3. These parameters are characterized but not 100% tested at 1.3ns. They are 100% tested at 1.5ns.
Item
Symbol
-33
-37
-5
-6
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Cycle Time
t
KHKH
3.3
---
3.6
---
5.0
---
6.0
---
ns
Clock High Pulse Width
t
KHKL
1.3
*3
---
1.3
*3
---
1.5
---
1.5
---
ns
Clock Low Pulse Width
t
KLKH
1.3
*3
---
1.3
*3
---
1.5
---
1.5
---
ns
Address Setup Time
t
AVKH
0.5
---
0.5
---
0.5
---
0.5
---
ns
Address Hold Time
t
KHAX
1.0
---
1.0
---
1.0
---
1.0
---
ns
Write Enables Setup Time
t
WVKH
0.5
---
0.5
---
0.5
---
0.5
---
ns
Write Enables Hold Time
t
KHWX
1.0
---
1.0
---
1.0
---
1.0
---
ns
Synchronous Select Setup Time
t
SVKH
0.5
---
0.5
---
0.5
---
0.5
---
ns
Synchronous Select Hold Time
t
KHSX
1.0
---
1.0
---
1.0
---
1.0
---
ns
Data Input Setup Time
t
DVKH
0.5
---
0.5
---
0.5
---
0.5
---
ns
Data Input Hold Time
t
KHDX
1.0
---
1.0
---
1.0
---
1.0
---
ns
Clock High to Output Valid
t
KHQV
t
KHQX*2
t
KHQX1*2
t
KHQZ*2
---
2.3
---
2.4
---
2.5
---
2.5
ns
Clock High to Output Hold
0.7
---
0.7
---
0.7
---
0.7
---
ns
Clock High to Output Low-Z
0.7
---
0.7
---
0.7
---
0.7
---
ns
Clock High to Output High-Z
---
2.3
---
2.4
---
2.5
---
2.5
ns
Output Enable Low to Output Valid
t
GLQV
t
GLQX*2
t
GHQZ*2
t
ZZE*2
t
ZZR*2
---
2.3
---
2.4
---
2.5
---
2.5
ns
Output Enable Low to Output Low-Z
0.5
---
0.5
---
0.5
---
0.5
---
ns
Output Enable High to Output High-Z
---
2.3
---
2.4
---
2.5
---
2.5
ns
Sleep Mode Enable Time
---
20.0
---
20.0
---
20.0
---
20.0
ns
Sleep Mode Recovery Time
20.0
---
20.0
---
20.0
---
20.0
---
ns
相關PDF資料 |
PDF描述 |
|---|---|
| CXK77B3641AGB | 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
| CXK77B1841GB | 4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (256K x 18位)) |
| CXK77B3611AGB- | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-5 | High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3611AGB-6 | High Speed Bi-CMOS Synchronous Static RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B1841GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B1841GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| CXK77B3610AGB-5R | 制造商:Sony Batteries 功能描述:77B3610AGB-5R |
| CXK77B3610GB- | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
| CXK77B3610GB-6 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:High Speed Bi-CMOS Synchronous Static RAM |
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