SLUS573 JULY 2003
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PROGRAMMING INFORMATION
DATA FLASH PROGRAMMING
The following sections describe the function of each data flash location and how the data is to be stored.
Fundamental Parameters
Sense Resistor Value
The 32-bit
CC Delta
DF 0xbc0xbf corrects the coulomb counter for sense resistor variations. It represents the
gain factor for the coulomb counter.
The 16-bit
Sense Resistor Gain
in DF 0xba-0xbb scales each integrating converter conversion to mAh. The
Current( ) related measurement
Sense Resistor Gain
is based on the resistance of the series sense resistor. The
following formula computes a nominal or starting value for
Sense Resistor Gain
from the sense resistor value.
306.25
Rs
Sense Resistor Gain
Digital Filter
The desired digital filter threshold, VDF (V), is set by the value stored in
Digital Filter
DF 0x2b.
Digital Filter
VDF
290 nV
Cell and Pack Characteristics
Battery Pack Capacity and Voltage
Pack capacity in mAh units is stored in
Design Capacity
, DF 0x310x32. In mAh mode, the bq2083V1P2 copies
Design Capacity
to DesignCapacity( ). In mWh mode, the bq2083V1P2 multiplies
Design Capacity
by
Design
Voltage
DF 0x040x05 to calculate DesignCapacity( ) scaled to 10 mWh.
Design Voltage
is stored in mV.
The initial value for
Last Measured Discharge
, in mAh, is stored in DF 0x350x36.
Last Measured Discharge
is
modified over the course of pack usage to reflect cell aging under the particular use conditions. The bq2083V1P2
updates
Last Measured Discharge
in mAh after a capacity learning cycle. The bq2083V1P2 uses the
Last
Measured Discharge
value to calculate FullChargeCapacity( ) in units of mAh or 10 mWh.
Remaining Time and Capacity Alarms
Remaining Time Alarm
in DF 0x00-0x01 and
Remaining Capacity Alarm
in 0x02-0x03 set the alarm thresholds
used in the SMBus command codes 0x01 and 0x02, respectively.
Remaining Time Alarm
is stored in minutes and
Remaining Capacity Alarm
in units of mAh or 10 mWh, depending on the BatteryMode( ) setting.
EDV Thresholds and Near Full Percentage
The bq2083V1P2 uses three pack-voltage thresholds to provide voltage-based warnings of low battery capacity.
The bq2083V1P2 uses the values stored in data flash for the EDV0, EDV1, and EDV2 values or calculates the
three thresholds from a base value and the temperature, capacity, and rate adjustment factors stored in data flash.
If EDV compensation is disabled then EDV0, EDV1, and EDV2 are stored directly in mV in DF 0x840x85, DF
0x860x87, and DF 0x880x89, respectively.
For capacity correction at EDV2,
Battery Low %
DF 0x2e can be set at a desired state-of-charge,
STATEOFCHARGE%, in the range of 3-19%. Typical values for STATEOFCHARGE% are 5-7%, representing
5-7% capacity.
Battery Low %
= (STATEOFCHARGE%
2.56)
The bq2083V1P2 updates FCC if a qualified discharge occurs from a near-full threshold of FCC
Near Full
, until
EDV2 condition is reached. The desired near-full threshold window is programmed in
Near Full
in DF 0x2f, 0x30
in mAh.
EDV Discharge Rate and Temperature Compensation
If EDV compensation is enabled, the bq2083V1P2 calculates battery voltage to determine EDV0, EDV1, and
EDV2 thresholds as a function of battery capacity, temperature, and discharge load. The general equation for
EDV0, EDV1, and EDV2 calculation is:
(2)
(3)
(4)