參數(shù)資料
型號(hào)： BQ2083
英文描述： Silicon Bridge Rectifiers
中文描述： 銀紫荊星章符合電量監(jiān)測(cè)計(jì)芯片的使用與BQ29311
文件頁(yè)數(shù)： 45/54頁(yè)
文件大小： 461K
代理商： BQ2083
SLUS573 JULY 2003
www.ti.com
45
Capacity %
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
0
1
2
3
4
5
6
7
8
9
10
Battery Low % = 7%
Load = 500 mA
VOLTAGE
vs
CAPACITY
V
EDV1
EDV2
45
°
C
20
°
C
Figure 8. EDV Calculations vs Capacity for
Various Temperatures
Figure 9. EDV Calculations vs Capacity for
Various Loads
Capacity %
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
EDV2
11.5
0
1
2
3
4
5
6
7
8
9
10
Battery Low % = 7%
TA = 35
°
C
VOLTAGE
vs
CAPACITY
V
EDV1
500 mA
1 A
EDV0
2 A
Overload Current Threshold
The overload protection disables discharge when the 16-bit limit programmed in DF 0x580x59 is breached. The
threshold is stored in mA.
Midrange Capacity Corrections
Three voltage-based thresholds,
VOC25
DF 0x780x79,
VOC50
DF 0x730x74, and
VOC75
DF 0x6e0x6f, are
used to test the accuracy of the RM based on open-circuit pack voltages. These thresholds are stored in the data
flash in mV. The values represent the open-circuit battery voltage at which the battery capacity should correspond
to the associated state of charge for each threshold.
Self-Discharge Rate
The nominal self-discharge rate, %PERDAY (% per day), is programmed in an 8-bit value
Self-Discharge Rate
DF 0x2c by the following relation:
%PERDAY
0.01
Self-Discharge Rate
Charge Efficiency
The bq2083V1P2 applies the efficiency factor, EFF%, to all charge added to the battery. EFF% is encoded in
Charge Efficiency
DF 0x51 according to equation 16:
Charge Efficiency
(EFF%
2.56–1)
Other Compensation
Battery Electronics Load
The amount of internal battery electronics load estimate in
μ
A, BEL, is stored in
Electronics Load
DF 0x2d as
follows:
Electronics Load
BEL
3
(8)
(9)
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