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參數(shù)資料
| 型號： | BLF861 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-540A, 4 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 167K |
| 代理商： | BLF861 |
1999 Aug 26
4
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
h
= 25
°
C; R
th mb-h
= 0.15 K/W, unless otherwise specified.
Notes
1.
Sync compression: input sync:
≥
33%; output sync: 27 %
measured in narrowband testcircuit.
Ruggedness in class-AB operation
The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
DS
= 32 V; f = 860 MHz at rated load power.
MODE OF
OPERATION
f
(MHz)
V
DS
(V)
I
DQ
(A)
P
L
(W)
G
p
(dB)
η
D
(%)
d
IM
(dBc)
G
p
(dB)
≤
1
CW, class-AB
860
32
1.15
150
>14
>50
2-tone, class-AB
f
1
= 860
f
1
= 860.1
860
(ch 69)
32
1.15
150 (PEP)
>14
>40
≤
30
PAL BG (TV), class-AB
32
1.15
typ.170
(peak sync)
>14
>40
note 1
Fig.3
Input impedance as a function of frequency
(series components); typical values per
section.
CW, class-AB operation; V
DS
= 32 V; I
DQ
= 1.15 A;
P
L
= 170 W (total device) ; T
h
= 25
°
C.
0
4
8
12
400
500
600
700
800
900
f (MHz)
Z
i
(
)
r
i
x
i
Fig.4
Load impedance as a function of frequency
(series components); typical values per
section.
CW, class-AB operation; V
DS
= 32 V; I
DQ
= 1.15 A;
P
L
= 170 W (total device) ; T
h
= 25
°
C.
-6
-4
-2
0
2
4
6
8
10
400
500
600
700
800
900
f (MHz)
Z
L
(
)
R
L
X
L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF861A | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF861A,112 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 150W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF861A112 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BLF871 | 功能描述:射頻MOSFET電源晶體管 100W, HF-1GHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF871,112 | 功能描述:射頻MOSFET電源晶體管 Trans MOSFET N-CH 89V 3-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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