參數(shù)資料
型號(hào)： BLF861
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor
中文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： SOT-540A, 4 PIN
文件頁(yè)數(shù)： 2/12頁(yè)
文件大小： 167K
代理商： BLF861
1999 Aug 26
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (UHF band).
APPLICATIONS
Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in an SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
PINNING - SOT540A
PIN
DESCRIPTION
1
2
3
4
5
drain 1
drain 2
gate 1
gate 2
source, connected to flange
Fig.1 Simplified outline.
5
1
2
4
3
Top view
MBK777
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
Notes
1.
Sync compression: input sync:
≥
33%; output sync: 27 %
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
G
p
(dB)
≤
1
CW, class-AB
860
860
(ch 69)
32
150
typ.170
(peak sync)
>14
>50
PAL BG (TV), class-AB
32
>14
>40
note 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
65
65
±
15
18
318
+150
200
V
V
A
W
°
C
°
C
T
mb
≤
25
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
相關(guān)PDF資料
PDF描述
BLT53 UHF power transistor
BLT61 UHF power transistor
BLT82 UHF power transistor
BLT94 UHF power transistor
BLU86 UHF power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF861A 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF861A,112 功能描述:射頻MOSFET電源晶體管 RF LDMOS 150W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF861A112 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BLF871 功能描述:射頻MOSFET電源晶體管 100W, HF-1GHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF871,112 功能描述:射頻MOSFET電源晶體管 Trans MOSFET N-CH 89V 3-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*