參數(shù)資料
型號(hào): BLF276
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power MOS transistor
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, PILL PACKAGE-6
文件頁(yè)數(shù): 2/13頁(yè)
文件大?。?/td> 85K
代理商: BLF276
December 1997
2
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF276
FEATURES
High power gain
Easy power control
Good thermal stability
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range. The transistor delivers an
output power of 100 W in class-B
operation at a supply voltage of 50 V.
The transistor is encapsulated in a
6-lead, SOT119 pill-package
envelope, with a ceramic cap.
PINNING - SOT119D3
PIN
DESCRIPTION
1
2
3
4
5
6
source
source
gate
drain
source
source
PIN CONFIGURATION
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
Fig.1 Simplified outline and symbol.
page
2
4
6
5
3
1
MSA308
Top view
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
P
(dB)
13
18
η
D
(%)
50
60
CW, class-B
225
108
50
50
100
100
相關(guān)PDF資料
PDF描述
BLF277 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF348 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF861 UHF power LDMOS transistor
BLT53 UHF power transistor
BLT61 UHF power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF277 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power MOS transistor
BLF278 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278,112 功能描述:射頻MOSFET電源晶體管 RF DMOS 250W VHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278/01,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR VHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278112 制造商:NXP Semiconductors 功能描述:N CH VHF PUSH / PULL POWER VDMOS 50V 1