參數(shù)資料
型號: BLF276
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power MOS transistor
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, PILL PACKAGE-6
文件頁數(shù): 1/13頁
文件大小: 85K
代理商: BLF276
DATA SHEET
Product specification
December 1997
DISCRETE SEMICONDUCTORS
BLF276
VHF power MOS transistor
相關(guān)PDF資料
PDF描述
BLF277 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF348 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
BLF861 UHF power LDMOS transistor
BLT53 UHF power transistor
BLT61 UHF power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF277 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power MOS transistor
BLF278 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278,112 功能描述:射頻MOSFET電源晶體管 RF DMOS 250W VHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278/01,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR VHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF278112 制造商:NXP Semiconductors 功能描述:N CH VHF PUSH / PULL POWER VDMOS 50V 1