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參數(shù)資料
| 型號(hào)： | BCR3AS-12 |
| 英文描述： | Thyristor Product Catalog |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁(yè)數(shù)： | 59/224頁(yè) |
| 文件大?。?/td> | 2697K |
| 代理商： | BCR3AS-12 |
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Data Sheets
Sensitive SCRs
2002 Teccor Electronics
Thyristor Product Catalog
E5 - 5
http://www.teccor.com
+1 972-580-7777
Electrical Specifications Notes
(1)
See Figure E5.1 through Figure E5.9 for current ratings at
specified operating temperatures.
(2)
(3)
See Figure E5.10 for I
GT
versus T
C
or T
L
.
See Figure E5.11 for instantaneous on-state current (i
T
) versus on-
state voltage (v
T
) TYP.
See Figure E5.12 for V
GT
versus T
C
or T
L
.
See Figure E5.13 for I
H
versus T
C
or T
L
.
For more than one full cycle, see Figure E5.14.
0.8 A to 4 A devices also have a pulse peak forward current on-
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 μs minimum,
15 μs maximum. See Figure E5.20 and Figure E5.21.
See Figure E5.15 for t
gt
versus I
GT
.
Test conditions as follows:
– T
C
or T
L
≤
80 °C, rectangular current waveform
– Rate-of-rise of current
≤
10 A/μs
– Rate-of-reversal of current
≤
5 A/μs
– I
TM
= 1 A (50 μs pulse), Repetition Rate = 60 pps
– V
RRM
= Rated
– V
R
= 15 V minimum, V
DRM
= Rated
– Rate-of-rise reapplied forward blocking voltage = 5 V/μs
– Gate Bias = 0 V, 100
(during turn-off time interval)
(4)
(5)
(6)
(7)
(8)
(9)
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2 A
PK
; T106/T107 devices are 4 A
PK
.
(11) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(12) V
D
= 6 V dc, R
L
= 100
(See Figure E5.19 for simple test circuit
for measuring gate trigger voltage and gate trigger current.)
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
temperature at maximum rated current.
(14) I
GT
= 500 μA maximum at T
C
= -40 °C for T106 devices
(15) I
H
= 10 mA maximum at T
C
= -65 °C for 2N5064 Series and
2N6565 Series devices
(16) I
H
= 6 mA maximum at T
C
= -40 °C for T106 devices
(17) Pulse Width
≤
10 μs
(18) I
GT
= 350 μA maximum at T
C
= -65 °C for 2N5064 Series and
2N6565 Series devices
(19) Latching current can be higher than 20 mA for higher I
GT
types.
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
(20) T
C
or T
L
= T
J
for test conditions in off state
(21) I
DRM
and I
RRM
= 50 μA for 2N5064 and 100 μA for 2N6565 at
125 °C
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) T
C
= 110 °C
V
GT
I
H
I
GM
(17)
V
GRM
P
GM
(17)
P
G(AV)
I
TSM
(6) (13)
dv/dt
di/dt
t
gt
(8)
t
q
(9)
l
2
t
(4) (12) (22)
Volts
T
C
=
25 °C
MAX
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
(5) (19)
mAmps
MAX
6
6
6
8
8
8
6
6
6
8
8
8
6
6
6
8
8
8
Amps
Volts
MIN
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
Watts
Watts
Amps
60/50 Hz
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
Volts/μSec
Amps/μSec
μSec
TYP
4
4
4
5
5
5
4
4
4
5
5
5
4
4
4
5
5
5
μSec
MAX
50
50
50
45
45
45
50
50
50
45
45
45
50
50
50
45
45
45
Amps
2
Sec
T
C
=
-40 °C
T
C
=
110 °C
T
C
= 110 °C
TYP
10
8
8
10
8
8
10
8
8
10
8
8
10
8
8
10
8
8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
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