- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369434 > BCR3AS-12 Thyristor Product Catalog PDF資料下載
參數(shù)資料
| 型號(hào)： | BCR3AS-12 |
| 英文描述： | Thyristor Product Catalog |
| 中文描述： | 晶閘管產(chǎn)品目錄 |
| 文件頁數(shù)： | 19/224頁 |
| 文件大?。?/td> | 2697K |
| 代理商： | BCR3AS-12 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁第128頁第129頁第130頁第131頁第132頁第133頁第134頁第135頁第136頁第137頁第138頁第139頁第140頁第141頁第142頁第143頁第144頁第145頁第146頁第147頁第148頁第149頁第150頁第151頁第152頁第153頁第154頁第155頁第156頁第157頁第158頁第159頁第160頁第161頁第162頁第163頁第164頁第165頁第166頁第167頁第168頁第169頁第170頁第171頁第172頁第173頁第174頁第175頁第176頁第177頁第178頁第179頁第180頁第181頁第182頁第183頁第184頁第185頁第186頁第187頁第188頁第189頁第190頁第191頁第192頁第193頁第194頁第195頁第196頁第197頁第198頁第199頁第200頁第201頁第202頁第203頁第204頁第205頁第206頁第207頁第208頁第209頁第210頁第211頁第212頁第213頁第214頁第215頁第216頁第217頁第218頁第219頁第220頁第221頁第222頁第223頁第224頁
2002 Teccor Electronics
Thyristor Product Catalog
E0 - 3
http://www.teccor.com
+1 972-580-7777
Electrical Parameter Terminology
Thyristor
di/dt (Critical Rate-of-rise of On-state Current) –
Maximum
value of the rate-of-rise of on-state current which a thyristor can
withstand without deleterious effect
dv/dt (Critical Rate-of-rise of Off-state Voltage or Static
dv/dt) –
Minimum value of the rate-of-rise of principal voltage
which will cause switching from the off state to the on state
dv/dt(c) Critical Rate-of-rise of Commutation Voltage of a
Triac (Commutating dv/dt) –
Minimum value of the rate-of-rise
of principal voltage which will cause switching from the off state
to the on state immediately following on-state current conduction
in the opposite quadrant
I
2
t (RMS Surge (Non-repetitive) On-state Fusing Current) –
Measure of let-through energy in terms of current and time for
fusing purposes
I
BO
(Breakover Current) –
Principal current at the breakover
point
I
DRM
(Repetitive Peak Off-state Current) –
Maximum leakage
current that may occur under the conditions of V
DRM
I
GT
(Gate Trigger Current) –
Minimum gate current required to
switch a thyristor from the off state to the on state
I
H
(Holding Current) –
Minimum principal current required to
maintain the thyristor in the on state
I
PP
(Peak Pulse Current) –
Peak pulse current at a short time
duration and specified waveshape
I
RRM
(Repetitive Peak Reverse Current) –
Maximum leakage
current that may occur under the conditions of V
RRM
I
S
(Switching Current) –
Current at V
S
when a sidac switches
from the clamping state to on state
I
T(RMS)
(On-state Current) –
Anode cathode principal current
that may be allowed under stated conditions, usually the full-
cycle RMS current
I
TSM
(Surge (Non-repetitive) On-state Current) –
Peak single
cycle AC current pulse allowed
P
G(AV)
(Average Gate Power Dissipation) –
Value of gate
power which may be dissipated between the gate and main ter-
minal 1 (or cathode) average over a full cycle
P
GM
(Peak Gate Power Dissipation) –
Maximum power which
may be dissipated between the gate and main terminal 1 (or
cathode) for a specified time duration
R
θ
JA
(Thermal Resistance, Junction-to-ambient) –
Tempera-
ture difference between the thyristor junction and ambient divided
by the power dissipation causing the temperature difference
under conditions of thermal equilibrium
Note
: Ambient is defined as the point where temperature does
not change as a result of the dissipation.
R
θ
JC
(Thermal Resistance, Junction-to-case) –
Temperature
difference between the thyristor junction and the thyristor case
divided by the power dissipation causing the temperature differ-
ence under conditions of thermal equilibrium
t
gt
(Gate-controlled Turn-on Time) –
Time interval between
the 10% rise of the gate pulse and the 90% rise of the principal
current pulse during switching of a thyristor from the off state to
the on state
t
q
(Circuit-commutated Turn-off Time) –
Time interval
between the instant when the principal current has decreased to
zero after external switching of the principal voltage circuit and
the instant when the SCR is capable of supporting a specified
principal voltage without turning on
V
BO
(Breakover Voltage) –
Principal voltage at the breakover
point
V
DRM
(Repetitive Peak Off-state Voltage) –
Maximum allow-
able instantaneous value of repetitive off-state voltage that may
be applied across a bidirectional thyristor (forward or reverse
direction) or SCR (forward direction only)
V
GT
(Gate Trigger Voltage) –
Minimum gate voltage required to
produce the gate trigger current
V
RRM
(Repetitive Peak Reverse Voltage) –
Maximum allow-
able instantaneous value of a repetitive reverse voltage that may
be applied across an SCR without causing reverse current ava-
lanche
V
S
(Switching Voltage) –
Voltage point after V
BO
when a sidac
switches from a clamping state to on state
V
T
(On-state Voltage) –
Principal voltage when the thyristor is in
the on state
Diode Rectifiers
I
F(AV)
(Average Forward Current) –
Average forward conduc-
tion current
I
FM
(Maximum (Peak) Reverse Current) –
Maximum reverse
leakage current that may occur at rated V
RRM
I
F(RMS)
(RMS Forward Current) –
RMS forward conduction cur-
rent
I
FSM
(Maximum (Peak) Forward (Non-repetitive) Surge
Current) –
Maximum (peak) forward single cycle AC surge cur-
rent allowed for specified duration
V
FM
(Maximum (Peak) Forward Voltage Drop) –
Maximum
(peak) forward voltage drop from the anode to cathode at stated
conditions
V
R
(Reverse Blocking Voltage) –
Maximum allowable DC
reverse blocking voltage that may be applied to the rectifier
V
RRM
(Maximum (Peak) Repetitive Reverse Voltage) –
Maxi-
mum peak allowable value of a repetitive reverse voltage that
may be applied to the rectifier
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCR3AS-8 | Thyristor Product Catalog |
| BCR3KM14L | TRIAC|700V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM14R | TRIAC|700V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM8 | TRIAC|400V V(DRM)|3A I(T)RMS|TO-220AB |
| BCR3KM-8 | BCR3KM-8 BCR3KM-12 Datasheet 382K/MAR.20.03 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCR3AS-12A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Triac Low Power Use |
| BCR3AS-12A(A1#B02) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Thyristor TRIAC 600V 30A 3-Pin(2+Tab) MP-3 Tube |
| BCR3AS-12A-A1 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Triac Low Power Use |
| BCR3AS-12A-A1#B02 | 制造商:Renesas Electronics 功能描述:Tray |
| BCR3AS-12A-A1B02 | 制造商:Renesas Electronics Corporation 功能描述:Triac,600V,3A,MP-3A |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。