參數(shù)資料
型號： ATTINY13V-10SUR
廠商： Atmel
文件頁數(shù)： 79/176頁
文件大小： 0K
描述： MCU AVR 1KB FLASH 10MHZ 8SOIC
產(chǎn)品培訓模塊： tinyAVR Introduction
標準包裝： 2,000
系列： AVR® ATtiny
核心處理器： AVR
芯體尺寸： 8-位
速度： 10MHz
外圍設備： 欠壓檢測/復位，POR，PWM，WDT
輸入/輸出數(shù)： 6
程序存儲器容量： 1KB（512 x 16）
程序存儲器類型： 閃存
EEPROM 大?。?/td> 64 x 8
RAM 容量： 64 x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
數(shù)據(jù)轉換器： A/D 4x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 8-SOIC（0.209"，5.30mm 寬）
包裝： 帶卷 (TR)
其它名稱： ATTINY13V-10SUR-ND
ATTINY13V-10SURTR
17
2535J–AVR–08/10
ATtiny13
The write access times for the EEPROM are given in Table 5-1 on page 21. A self-timing func-
tion, however, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In heavily fil-
tered power supplies, VCC is likely to rise or fall slowly on Power-up/down. This causes the
device for some period of time to run at a voltage lower than specified as minimum for the clock
frequency used. See “Preventing EEPROM Corruption” on page 19 for details on how to avoid
problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
5.3.2
Atomic Byte Programming
Using Atomic Byte Programming is the simplest mode. When writing a byte to the EEPROM, the
user must write the address into the EEARL Register and data into EEDR Register. If the
EEPMn bits are zero, writing EEPE (within four cycles after EEMPE is written) will trigger the
erase/write operation. Both the erase and write cycle are done in one operation and the total
programming time is given in Table 5-1 on page 21. The EEPE bit remains set until the erase
and write operations are completed. While the device is busy with programming, it is not possi-
ble to do any other EEPROM operations.
5.3.3
Split Byte Programming
It is possible to split the erase and write cycle in two different operations. This may be useful if
the system requires short access time for some limited period of time (typically if the power sup-
ply voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation. But since the erase and write operations
are split, it is possible to do the erase operations when the system allows doing time-critical
operations (typically after Power-up).
5.3.4
Erase
To erase a byte, the address must be written to EEARL. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in Table 5-1 on page 21). The EEPE bit remains set until the erase operation
completes. While the device is busy programming, it is not possible to do any other EEPROM
operations.
5.3.5
Write
To write a location, the user must write the address into EEARL and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in Table 5-1 on page 21). The EEPE bit
remains set until the write operation completes. If the location to be written has not been erased
before write, the data that is stored must be considered as lost. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
The calibrated Oscillator is used to time the EEPROM accesses. Make sure the Oscillator fre-
quency is within the requirements described in “OSCCAL – Oscillator Calibration Register” on
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