參數(shù)資料
型號： ATTINY13V-10SUR
廠商： Atmel
文件頁數(shù)： 70/176頁
文件大?。?/td> 0K
描述： MCU AVR 1KB FLASH 10MHZ 8SOIC
產(chǎn)品培訓(xùn)模塊： tinyAVR Introduction
標(biāo)準(zhǔn)包裝： 2,000
系列： AVR® ATtiny
核心處理器： AVR
芯體尺寸： 8-位
速度： 10MHz
外圍設(shè)備： 欠壓檢測/復(fù)位，POR，PWM，WDT
輸入/輸出數(shù)： 6
程序存儲器容量： 1KB（512 x 16）
程序存儲器類型： 閃存
EEPROM 大小： 64 x 8
RAM 容量： 64 x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 4x10b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 8-SOIC（0.209"，5.30mm 寬）
包裝： 帶卷 (TR)
其它名稱： ATTINY13V-10SUR-ND
ATTINY13V-10SURTR
2010-2011 Microchip Technology Inc.
Preliminary
DS41430C-page 161
PIC16(L)F720/721
18.0 FLASH PROGRAM MEMORY
SELF READ/SELF WRITE
CONTROL
The Flash Program Memory is readable and writable
during normal operation of the device. This memory is
not directly mapped in the register file space. Instead,
it is indirectly addressed through the Special Function
Registers. There are six SFRs used to read/write this
memory:
PMCON1
PMCON2
PMDATL
PMDATH
PMADRL
PMADRH
When interfacing the program memory block, the
PMDATL and PMDATH registers form a two byte word
which holds the 14-bit program data for reading, and
the PMADRL and PMADRH registers form a two byte
word which holds the 13-bit address of the program
Flash location being accessed. These devices have 2K
to 4K words of program memory with an address range
from 0000h to 0FFFh.
Devices without a full map of memory will shadow
accesses to unused blocks back to the implemented
memory.
18.1
Program Memory Read Operation
To read a program memory location, the user must
write two bytes of the address to the PMADRH and
PMADRL
registers,
then
set
control
bit
RD
(PMCON1<0>). Once the read control bit is set, the
Program Memory Read (PMR) controller uses the two
instruction cycles to read the data. This causes the two
instructions immediately following the ‘BSF PMCON1,
RD’ instruction to be ignored.
The data is available in the third cycle, following the set
of the RD bit, in the PMDATH and PMDATL registers.
PMDATL and PMDATH registers will hold this value
until another read is executed. See Example 18-1 and
Figure 18-1 for more information.
EXAMPLE 18-1:
FLASH PROGRAM MEMORY READ
Note:
Interrupts must be disabled during the
time from setting PMCON1<0> (RD) to
the third instruction thereafter.
* This code block will read 1 word of program
* memory at the memory address:
PROG_ADDR_HI: PROG_ADDR_LO
*
data will be returned in the variables;
*
PROG_DATA_HI, PROG_DATA_LO
BANKSEL
PMADRL
; Select Bank 2
MOVLW
PROG_ADDR_LO
;
MOVWF
PMADRL
; Store LSB of address
MOVLW
PROG_ADDR_HI
;
MOVWL
PMADRH
; Store MSB of address
BANKSEL
PMCON1
; Select Bank 3
BCF
INTCON,GIE
; Disable interrupts
BSF
PMCON1,RD
; Initiate read
NOP
; Ignored (Figure 18-1)
NOP
; Ignored (Figure 18-1)
BSF
INTCON,GIE
; Restore interrupts
BANKSEL
PMDATL
; Select Bank 2
MOVF
PMDATL,W
; Get LSB of word
MOVWF
PROG_DATA_LO
; Store in user location
MOVF
PMDATH,W
; Get MSB of word
MOVWF
PROG_DATA_HI
; Store in user location
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