參數資料
型號: AT49BN1604
廠商: Atmel Corp.
英文描述: 16-megabit Burst Mode 3-volt Only Flash Memory(16M位 3V猝發(fā)模式閃速存儲器)
中文描述: 16兆位突發(fā)模式3伏,只有閃存(1,600位3V的猝發(fā)模式閃速存儲器)
文件頁數: 10/19頁
文件大小: 264K
代理商: AT49BN1604
AT49BN1604(T)
10
Notes:
1. X can be V
IL
or V
IH
.
2. Refer to AC Programming Waveforms.
3. V
H
= 12.0V
±
0.5V.
4. Manufacturer Code: 001FH,
Device Code:
00DFH–AT49BN1604,
00DEH–AT49BN1604T.
5. See details under Software Product Identification
Entry/Exit.
6. The use of the VPP pin is optional.
Note:
1. In the erase mode, I
CC
is 30 mA.
DC and AC Operating Range
AT49BN1604(T)-10
Operating
Temperature (Case)
Com.
0°C - 70°C
Ind.
-40°C - 85°C
V
CC
Power Supply
Operating Modes
2.7V to 3.3V
Mode
CE
OE
WE
RESET
BAA
V
PP
(6)
Ai
I/O
Read
V
IL
V
IL
V
IH
V
IH
V
IH
X
Ai
D
OUT
Burst Read
V
IL
V
IL
V
IH
V
IH
V
IL
X
Ai
D
OUT
Program/Erase
(2)
V
IL
V
IH
V
IL
V
IH
V
IH
5V
±
10%
Ai
D
IN
Standby/Program
Inhibit
V
IH
X
(1)
X
V
IH
X
X
X
High Z
Program Inhibit
X
X
V
IH
V
IH
V
IH
X
Program Inhibit
X
V
IL
X
V
IH
V
IH
X
Output Disable
X
V
IH
X
V
IH
X
X
High Z
Reset
X
X
X
V
IL
V
IH
X
X
High Z
Product Identification
Hardware
V
IL
V
IL
V
IH
V
IH
V
IH
A1 - A19 = V
IL
, A9 = V
H
(3),
, A0 = V
IL
Manufacturer Code
(4)
A1 - A19 = V
IL
, A9 = V
H
(3)
, A0 = V
IH
Device Code
(4)
Software
(5)
V
IH
A0 = V
IL
, A1 - A19 = V
IL
Manufacturer Code
(4)
A0 = V
IH
, A1 - A19 = V
IL
Device Code
(4)
DC Characteristics
Symbol
Parameter
Condition
Min
Max
Units
I
LI
Input Load Current
V
IN
= 0V to V
CCQ
10
μ
A
I
LO
Output Leakage Current
V
I/O
= 0V to V
CCQ
10
μ
A
I
SB1
V
CC
Standby Current CMOS
CE = V
CCQ
- 0.3V to V
CCQ
10
μ
A
I
SB2
V
CC
Standby Current TTL
CE = 2.0V to V
CCQ
1
mA
I
CC
(1)
V
CC
Active Current
f = 40 MHz; I
OUT
= 0 mA
30
mA
I
CCRE
V
CC
Read While Erase Current
f = 40 MHz; I
OUT
= 0 mA
50
mA
I
CCRW
V
CC
Read While Write Current
f = 40 MHz; I
OUT
= 0 mA
50
mA
V
IL
Input Low Voltage
0.6
V
V
IH
Input High Voltage
V
CCQ
= 1.65V - 2.2V
V
CCQ
- 0.2
V
V
CCQ
= 2.7V - 3.3V
2.0
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.45
V
V
OH
Output High Voltage
I
OH
= -100 μA; V
CCQ
= 1.65V - 2.2V
V
CCQ
- 0.1
V
I
OH
= -400 μA; V
CCQ
= 2.7V - 3.3V
2.4
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