參數(shù)資料
型號: AT49BN1604
廠商: Atmel Corp.
英文描述: 16-megabit Burst Mode 3-volt Only Flash Memory(16M位 3V猝發(fā)模式閃速存儲器)
中文描述: 16兆位突發(fā)模式3伏,只有閃存(1,600位3V的猝發(fā)模式閃速存儲器)
文件頁數(shù): 1/19頁
文件大小: 264K
代理商: AT49BN1604
1
Features
16M Bit (1M x 16) Flash Memory
3.0
±
10% Read/Write
Random Access Time - 100 ns
Burst Access Time - 25 ns
Sector Erase Architecture
– Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
– Two 16K Word (32K Byte) Sectors with Individual Write Lockout
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
Typical Word Programming Time - 30 μs
Typical Sector Erase Time: 32K Word Sectors - 500 ms; 4K Word Sectors - 100 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
– Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
– Memory Plane B: Twenty-four 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from any Sector by Suspending
Erase of any Different Sector
Low-Power Operation
– 30 mA Active
– 10 μA Standby
Data Polling and Toggle Bit for End of Program Detection
Optional VPP Pin for Fast Programming
RESET Input for Device Initialization
TSOP and BGA Package
Product Description
The AT49BN1604(T) is a 2.7 volt 16-megabit Flash memory. The memory is divided
into 40 blocks for erase operations. It’s synchronous architecture allows fast sequen-
tial “burst” accesses of 25 ns after an initial random access of 100 ns. This device can
be read or reprogrammed off a single 2.7V power supply, making it ideally suited for
16-megabit
(1M x 16)
Burst Mode
3-volt Only
Flash Memory
AT49BN1604
AT49BN1604T
Advance
Information
Rev. 1141B–05/99
Pin Configurations
Pin Name
Pin Function
I/O0-I/O15
Data Inputs/Outputs
A0-A19
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
AVD
Address Latch Enable
BAA
Advance
CLK
Clock
RESET
Reset
VPP
Optional Power Supply
for Faster Program/
Erase Operations
VCCQ
Output Power Supply
RDY
Ready
DC
Don’t Connect
(continued)
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