參數(shù)資料
型號: AS4LC8M8S0-10TC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
中文描述: 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 9/24頁
文件大小: 566K
代理商: AS4LC8M8S0-10TC
AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
9
AC parameters common to all waveforms (continued)
Notes
1
2
3
4
5
6
7
Minimum clock cycles = (Minimum time / clock cycle time) rounded up.
Minimum delay required to complete write.
Column address change allowed every cycle.
Parameters dependent on CAS latency.
If clock rising time
>
1ns, (tr/2-0.5)ns should be added to parameter.
If (tr and tf)
>
1ns, [(tr+tf)/2-1]ns should be added to parameter.
Outputs measured at 1.5V with 50pF load only without resistive termination.
Burst sequence
(BL = 4)
Burst sequence
(BL = 8)
Sym
t
DQD
t
DQM
DQM to data mast during writes
DQM to data high Z during
Parameter
CAS
latency
-75
-8
-10 F
-10
Unit
CLK
CLK
Notes
Min Max
1
0
Min
1
0
Max
Min
1
0
Max
Min
1
0
Max
DQM to input data delay
t
DQZ
reads
2
2
2
2
CLK
t
DWD
Write command to input data
delay
Data-in to active command
Load mode register to active/
refresh command
0
0
0
0
CLK
t
DAL
5
5
5
5
CLK
t
MRD
1
1
1
1
CLK
t
ROH
Data-out high Z from
precharge/burst stop command
3
2
3
2
3
2
3
2
3
2
CLK
CLK
4
4
t
CKED
CKE to CLOCK disable or power-
down entry mode
CKE to clock enable or power-
down exit mode
1
1
1
1
CLK
t
PED
1
1
1
1
CLK
Initial address
Sequential
1
2
3
0
Interleave
1
0
3
2
A1
0
0
1
1
A0
0
1
0
1
0
1
2
3
2
3
0
1
3
0
1
2
0
1
2
3
2
3
0
1
3
2
1
0
Initial address
A1
0
0
1
1
0
0
1
1
Sequential
3
4
5
6
7
0
1
2
Interleave
3
2
1
0
7
6
5
4
A2
0
0
0
0
1
1
1
1
A0
0
1
0
1
0
1
0
1
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
0
2
3
4
5
6
7
0
1
4
5
6
7
0
1
2
3
5
6
7
0
1
2
3
4
6
7
0
1
2
3
4
5
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
1
0
3
2
5
4
7
6
2
3
0
1
6
7
4
5
4
5
6
7
0
1
2
3
5
4
7
6
1
0
3
2
6
7
4
5
2
3
0
1
7
6
5
4
3
2
1
0
相關PDF資料
PDF描述
AS4LC8M8S0-75TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC8M8S0-8TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M4E0 4M × 4 CMOS DRAM (EDO) Family(4M × 4 CMOS動態(tài)RAM(擴展數(shù)據總線)系列)
AS4LC4M4E1 4M × 4 CMOS DRAM (EDO) Family(4M × 4 CMOS動態(tài)RAM(擴展數(shù)據總線)系列)
AS5020 6-BIT MAGNETIC ANGULAR POSITION ENCODER WITH SERIAL INTERFACE
相關代理商/技術參數(shù)
參數(shù)描述
AS4LC8M8S0-75TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC8M8S0-8TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4PD 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Standard Avalanche Surface Mount Rectifiers
AS-4PD 制造商:RALTRON 制造商全稱:RALTRON 功能描述:SURFACE MOUNT MICROPROCESSOR CRYSTAL
AS4PDHM3/86A 功能描述:整流器 4A 200V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel