參數(shù)資料
型號(hào): AS4LC8M8S0-10TC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
中文描述: 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁(yè)數(shù): 13/24頁(yè)
文件大?。?/td> 566K
代理商: AS4LC8M8S0-10TC
AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
13
Concurrent Auto-P Waveforms
According to Intel ’s specification, auto-p burst interruption is allowed by another burst provided that the interrupting burst
is in a different bank than the ongoing burst.
(A) RD-P interrupted by RD in another bank (CL = 3, BL = 4)
(B) RD-P interrupted by WR in another bank (CL = 2, BL = 8)
(C) WR-P interrupted by RD in another bank (CL = 2, BL = 4)
* The row active command of the precharge bank can be issued after t
RP
from this point.
CLK
CMD
(A)
DQ
A
0
A
1
B
0
B
1
B
2
B
3
Bank A Precharge Starts *
RD
(B)
CLK
CMD
(A)
DQ
Q
A0
Q
A1
D
N(B0)
D
(B1)
D
(B2)
Bank A Precharge Starts *
(B)
DQM
D
(B7)
CLK
CMD
WRP
(A)
DQ
D
(A0)
D
(A1)
Q
B0
Q
B1
Q
B2
Bank A Precharge Starts *
RD
(B)
Q
B3
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