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參數(shù)資料
| 型號： | AS4LC8M8S0-10TC |
| 廠商： | ALLIANCE SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| 中文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 17/24頁 |
| 文件大?。?/td> | 566K |
| 代理商： | AS4LC8M8S0-10TC |
AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
17
write cycle
Precharge command
A Precharge command can be used to interrupt burst read/write operation during the read cycle. During RD, burst read is
terminated and o/p goes to High Z after CAS latency. The same bank can be activated after t
RP
. During write, burst write
operation is terminated immediately. Data written two cycles prior to the precharge command will be correctly stored. Set
DQM high one cycle before Precharge command and hold it high until Precharge command to mask and avoid writing invalid
data.
read cycle (CL = 2)
read cycle (CL = 3)
write cycle (BL = 8)
CLK
CMD
DQ
Burst stop
Write data
(CL = 2,3)
Q
0
Q
1
Q
2
Q
3
CLK
CMD
DQ
Read data
PRE
ACT
Q
0
Q
1
Q
2
Q
3
t
RP
CLK
CMD
DQ
Read data
PRE
ACT
Q0
Q1
Q2
Q3
CLK
CMD
DQ
Write data
PRE
ACT
D
0
D
1
D
2
Q
4
t
RP
D
3
Masked
DQM
相關PDF資料 |
PDF描述 |
|---|---|
| AS4LC8M8S0-75TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-8TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M4E0 | 4M × 4 CMOS DRAM (EDO) Family(4M × 4 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）系列) |
| AS4LC4M4E1 | 4M × 4 CMOS DRAM (EDO) Family(4M × 4 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線）系列) |
| AS5020 | 6-BIT MAGNETIC ANGULAR POSITION ENCODER WITH SERIAL INTERFACE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC8M8S0-75TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0-8TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4PD | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Standard Avalanche Surface Mount Rectifiers |
| AS-4PD | 制造商:RALTRON 制造商全稱:RALTRON 功能描述:SURFACE MOUNT MICROPROCESSOR CRYSTAL |
| AS4PDHM3/86A | 功能描述:整流器 4A 200V RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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