參數(shù)資料
型號: AS4LC8M8S0-10TC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
中文描述: 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 23/24頁
文件大?。?/td> 566K
代理商: AS4LC8M8S0-10TC
AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
23
Interleaved bank write waveform
(BL = 8, Autoprecharge)
BA0 and BA1 together determine which bank undergoes operations. AP = internal precharge begins
CLK
CS
RAS
CAS
WE
A10
A0-A9.A11
DQM
CKE
DQ
Active
Write
Active
Write
Bank A
Bank B
Active
Write
AP Bank A
AP Bank B
t
RC
t
RAS
t
RP
t
RAS
t
RAS
t
RCD
t
RCD
t
RCD
CA
a
RA
a
RB
b
RB
b
CA
b
CA
c
RA
a
RA
c
RA
c
DA
a0
DA
a1
DA
a4
DA
a5
DA
a6
DA
a7
DB
b0
DB
b1
DB
b2
DB
b3
DB
b4
DB
b5
DB
b6
DB
b7
DA
c0
DA
c1
DA
c2
BA0/BA1
Bank
Bank
Bank
Bank
Bank
Bank
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AS4LC8M8S0-75TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC8M8S0-8TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
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