參數(shù)資料
型號(hào): AS4C4M4F0
廠商: Alliance Semiconductor Corporation
英文描述: 5V 4M×4 CMOS DRAM (Fast Page Mode)(5V 4M×4 CMOS 動(dòng)態(tài)RAM(快速頁(yè)面模式))
中文描述: 5V的4米× 4的CMOS的DRAM(快速頁(yè)面模式)(5V的4米× 4的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器(快速頁(yè)面模式))
文件頁(yè)數(shù): 4/18頁(yè)
文件大?。?/td> 412K
代理商: AS4C4M4F0
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Parameter
Input voltage
Input voltage (DQs)
Power supply voltage
Storage temperature (plastic)
Soldering temperature × time
Power dissipation
Short circuit output current
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Symbol
V
in
V
DQ
V
CC
T
STG
T
SOLDER
P
D
I
out
Min
-1.0
-1.0
-1.0
-55
Max
+7.0
V
CC
+ 0.5
+7.0
+150
260 × 10
1
50
Unit
V
V
V
°C
o
C × sec
W
mA
Parameter
Symbol
Test conditions
0V
V
in
+5.5V,
Pins not under test = 0V
D
OUT
disabled, 0V
V
out
+5.5V
-50
-60
Unit
Notes
Min
Max
Min
Max
Input leakage current
I
IL
-5
+5
-5
+5
μA
Output leakage current
Operating power
supply current
TTL standby power
supply current
Average power supply
current, RAS refresh
mode or CBR
Fast page mode average
power supply current
CMOS standby power
supply current
I
OL
-5
+5
-5
+5
μA
I
CC1
RAS, CAS Address cycling; t
RC
=min
135
120
mA
1,2
I
CC2
RAS = CAS
V
IH
2.0
2.0
mA
I
CC3
RAS cycling, CAS
V
IH
,
t
RC
= min of RAS low after XCAS low.
120
110
mA
1
I
CC4
RAS = V
IL
, CAS,
address cycling: t
HPC
= min
130
120
mA
1, 2
I
CC5
RAS = CAS = V
CC
- 0.2V
1.0
1.0
mA
Output voltage
V
OH
V
OL
I
OUT
= -5.0 mA
I
OUT
= 4.2 mA
2.4
2.4
V
V
0.4
0.4
CAS before RAS refresh
current
I
CC6
RAS, CAS cycling, t
RC
= min
120
110
mA
Self refresh current
I
CC7
RAS = UCAS = LCAS
0.2V,
WE = OE
V
CC
- 0.2V,
all other inputs at 0.2V or
V
CC
- 0.2V
0.6
0.6
mA
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