- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381310 > AS4C4M4F0 (Alliance Semiconductor Corporation) 5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 動態(tài)RAM（快速頁面模式）) PDF資料下載
參數(shù)資料
| 型號： | AS4C4M4F0 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 動態(tài)RAM（快速頁面模式）) |
| 中文描述： | 5V的4米× 4的CMOS的DRAM（快速頁面模式）（5V的4米× 4的CMOS動態(tài)隨機存儲器（快速頁面模式）） |
| 文件頁數(shù)： | 1/18頁 |
| 文件大?。?/td> | 412K |
| 代理商： | AS4C4M4F0 |
'
$GYDQFH LQIRUPDWLRQ
Copyright 1998 Alliance Semiconductor. All rights reserved.
$6 & 0 )
$6 & 0 )
','
$
$
$//,$1&( 6(0,&21'8&725
9 0e &026 '5$0 IDVW SDJH PRGH
)HDWXUHV
Organization: 4,194,304 words × 4 bits
High speed
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
Low power consumption
- Active:
908 mW max
- Standby: 5.5 mW max, CMOS I/O
Fast page mode
Refresh
- 4096 refresh cycles, 64 ms refresh interval for
AS4C4M4F0
- 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4F1
- RAS-only or CAS-before-RAS refresh or self-refresh
TTL-compatible, three-state I/O
JEDEC standard package
- 300 mil, 24/26-pin SOJ
- 300 mil, 24/26-pin TSOP
Latch-up current
≥
200 mA
ESD protection
≥
2000 mV
Industrial and commercial temperature available
3LQDUUDQJHPHQW
A8
A7
A6
A5
A4
GND
A10
A0
A1
A2
A3
V
CC
GND
I/O3
I/O2
CAS
OE
A9
V
CC
I/O0
I/O1
WE
RAS
1
2
3
4
5
6
26
25
24
23
22
21
*NC/A11
8
9
10
11
12
13
18
17
16
15
14
SOJ
A
A8
A7
A6
A5
A4
GND
A10
A0
A1
A2
A3
V
CC
GND
I/O3
I/O2
CAS
OE
A9
V
CC
I/O0
I/O1
WE
RAS
1
2
3
4
5
6
*NC/A11
TSOP
A
*NC on 2K refresh version; A11 on 4K refresh version
19
3LQGHVLJQDWLRQ
Pin(s)
A0 to A11
RAS
CAS
WE
I/O0 to I/O3
OE
V
CC
GND
Description
Address inputs
Row address strobe
Column address strobe
Write enable
Input/output
Output enable
Power
Ground
6HOHFWLRQJXLGH
Symbol
t
RAC
t
CAA
t
CAC
t
OEA
t
RC
t
PC
I
CC1
I
CC5
AS4C4M4F0-50
AS4C4M4F1-50
50
25
12
13
85
25
135
1.0
AS4C4M4F0-60
AS4C4M4F1-60
60
30
15
15
100
30
120
1.0
Unit
ns
ns
ns
ns
ns
ns
mA
mA
Maximum RAS access time
Maximum column address access time
Maximum CAS access time
Maximum output enable (OE) access time
Minimum read or write cycle time
Minimum fast page mode cycle time
Maximum operating current
Maximum CMOS standby current
8
9
10
11
12
13
18
17
16
15
14
19
26
25
24
23
22
21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4C4M4F1 | 5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 動態(tài)RAM（快速頁面模式）) |
| AS4C4M4F1Q | 5V 4M×4 CMOS QuadCAS DRAM （Fast Page Mode)(5V 4M×4 CMOS QuadCAS 動態(tài)RAM（快速頁面模式）) |
| AS4C4M4FOQ | 5V 4M×4 CMOS QuadCAS DRAM （Fast Page Mode)(5V 4M×4 CMOS QuadCAS 動態(tài)RAM（快速頁面模式）) |
| AS4LC1M16E5 | 3V 1M×16 CMOS DRAM (EDO)(3V 1M×16 CMOS動態(tài)RAM（擴展數(shù)據(jù)總線)) |
| AS4LC1M16S1 | 3.3V 1M × 16 CMOS Synchronous DRAM(3.3V 1M × 16 CMOS同步動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4C4M4F0-50 | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:5V 4M×4 CMOS DRAM (Fast Page mode) |
| AS4C4M4F0-50JC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| AS4C4M4F0-50JI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| AS4C4M4F0-50TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| AS4C4M4F0-50TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。