參數(shù)資料
型號(hào): AS4C4M4EOQ
廠商: Alliance Semiconductor Corporation
英文描述: 4M × 4 CMOS QuadCAS DRAM(EDO) Family(4M × 4 CMOS QuadCAS動(dòng)態(tài)RAM(擴(kuò)展數(shù)據(jù)總線))
中文描述: 4米× 4的CMOS QuadCAS的DRAM(江戶)家庭(4米× 4的CMOS QuadCAS動(dòng)態(tài)隨機(jī)存儲(chǔ)器(擴(kuò)展數(shù)據(jù)總線))
文件頁(yè)數(shù): 4/16頁(yè)
文件大?。?/td> 384K
代理商: AS4C4M4EOQ
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Parameter
Input voltage
Input voltage (DQs)
Power supply voltage
Storage temperature (plastic)
Soldering temperature × time
Power dissipation
Short circuit output current
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Symbol
V
in
V
DQ
V
CC
T
STG
T
SOLDER
P
D
I
out
Min
-1.0
-1.0
-1.0
-55
Max
+7.0
V
CC
+ 0.5
+7.0
+150
260 × 10
1
50
Unit
V
V
V
°C
o
C × sec
W
mA
Parameter
Symbol Test conditions
0V
V
in
+5.5V,
Pins not under test = 0V
D
OUT
disabled, 0V
V
out
+5.5V
RAS, UCAS, LCAS, Address cycling;
t
RC
=min
-50
-60
Unit
Notes
Min
Max
Min
Max
Input leakage current
I
IL
-5
+5
-5
+5
μA
Output leakage current I
OL
Operating power
supply current
TTL standby power
supply current
Average power supply
current, RAS refresh
mode or CBR
EDO page mode
average power supply
current
CMOS standby power
supply current
-5
+5
-5
+5
μA
I
CC1
110
100
mA
1,2
I
CC2
RAS = UCAS = LCAS
V
IH
2.0
2.0
mA
I
CC3
RAS cycling, UCAS = LCAS
V
IH
,
t
RC
= min of RAS low after XCAS
low.
110
100
mA
1
I
CC4
RAS = V
IL
, UCAS or LCAS,
address cycling: t
HPC
= min
90
80
mA
1, 2
I
CC5
RAS = UCAS = LCAS = V
CC
- 0.2V
1.0
1.0
mA
Output voltage
V
OH
V
OL
I
OUT
= -5.0 mA
I
OUT
= 4.2 mA
RAS, UCAS or LCAS cycling, t
RC
=
min
RAS = UCAS = LCAS
0.2V,
WE = OE
V
CC
- 0.2V
all other inputs at 0.2V or
V
CC
- 0.2V
2.4
2.4
V
V
0.4
0.4
CAS before RAS refresh
current
I
CC6
110
100
mA
Self refresh current
I
CC7
0.6
0.6
mA
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