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參數(shù)資料
| 型號： | AO6602L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強模式互補場效應晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 159K |
| 代理商： | AO6602L |
AO6602
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
10
1.9
54
78
88
4.5
0.79
75
T
J
=125°C
115
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
2.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
200
40
20
2.3
240
pF
pF
pF
3
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
6.5
3.1
1.2
1.6
3.3
2.5
13.2
1.7
9.4
3.5
8.5
4
nC
nC
nC
nC
ns
ns
ns
ns
12
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Charge I
F
=3.1A, dI/dt=100A/
μ
s
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=3.1A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
DS
=5V, I
D
=3.1A
I
S
=1A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=3.1A
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=250
μ
A
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
I
DSS
μ
A
N-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=4.5V, I
D
=2A
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Gate Drain Charge
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, I
D
=3.1A
V
GS
=10V, V
DS
=15V, R
L
=4.7
,
R
GEN
=3
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 3 : June 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha and Omega Semiconductor, Ltd.
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