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參數(shù)資料
| 型號： | AO6700 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | N溝道增強模式場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 115K |
| 代理商： | AO6700 |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
200
80
Maximum Junction-to-Lead
C
Steady-State
52
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
129
160
°C/W
Steady-State
158
90
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
102
51
130
80
Steady-State
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
70
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
0.89
0.5
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.39
0.78
A
1
10
Pulsed Forward Current
B
Schottky reverse voltage
20
1.5
Continuous Forward Current
A
I
F
A
3.3
10
Pulsed Drain Current
B
Gate-Source Voltage
±8
4.1
Continuous Drain Current
A
I
D
Parameter
Drain-Source Voltage
MOSFET
20
Schottky
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AO6700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = 20V
I
D
= 4.1A (V
GS
= 4.5V)
R
DS(ON)
< 50m
(V
GS
= 4.5V)
R
DS(ON)
< 65m
(V
GS
= 2.5V)
R
DS(ON)
< 95m
(V
GS
= 1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO6700 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6700 is Pb-free (meets ROHS & Sony
259 specifications). AO6700L is a Green Product ordering
option. AO6700 and AO6700L are electrically identical.
A
K
G
D
S
TSOP6
Top View
G
S
K
D
D
A
1
2
3
6
5
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO6700L | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6701 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6701L | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6702 | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6702L | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO6700L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6701 | 功能描述:MOSFET P-CH -30V -2.3A 6-TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO6701L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6702 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6702L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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