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參數(shù)資料
| 型號： | AO6701L |
| 廠商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | P通道增強(qiáng)模式場的肖特基二極管晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 167K |
| 代理商： | AO6701L |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
MOSFET
-30
±12
-2.3
-1.8
Schottky
Continuous Drain Current
A
Pulsed Drain Current
B
Schottky reverse voltage
I
D
A
-15
20
2
1
Continuous Forward Current
A
Pulsed Forward Current
B
I
F
A
10
0.92
W
0.7
0.59
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.15
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Typ
78
106
64
Max
110
150
80
t
≤
10s
Steady-State
Steady-State
R
θ
JA
°C/W
t
≤
10s
Steady-State
Steady-State
R
θ
JA
109.4
136.5
58.5
135
175
80
°C/W
AO6701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -30V
I
D
= -2.3A (V
GS
= -10V)
R
DS(ON)
< 135m
(V
GS
= -10V)
R
DS(ON)
< 185m
(V
GS
= -4.5V)
R
DS(ON)
< 265m
(V
GS
= -2.5V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AO6701 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6701 is Pb-free (meets ROHS & Sony
259 specifications). AO6701L is a Green Product ordering
option. AO6701 and AO6701L are electrically identical.
TSOP6
G
S
A
D
N/C
K
1
2
3
6
5
4
A
K
G
D
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO6702 | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6702L | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6704 | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6704L | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6706 | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO6702 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6702L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6704 | 功能描述:MOSFET N-CH 30V 3.6A 6-TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AO6704L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO6706 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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