參數(shù)資料
型號: AO4918
廠商: ALPHA
英文描述: Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 非對稱雙N溝道增強型場效應(yīng)晶體管
文件頁數(shù): 7/8頁
文件大小: 156K
代理商: AO4918
AO4918
Q2 Electrical Characteristics (T
J
=25°C unless otherwise noted)
180
110
0.7
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
V
GS
=3V
3.5V
4V
10V
4.5V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
10
14
18
22
26
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
125°C
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
N
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
R
D
)
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=8.3A
25°C
I
D
=8.3A
125°C
25°C
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
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