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參數(shù)資料
| 型號(hào)： | AO4924 |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對(duì)稱雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 165K |
| 代理商： | AO4924 |
Symbol
V
DS
V
GS
Max FET1
30
±12
9.0
7.2
40
16
38
2.0
1.3
-55 to 150
Max FET2
30
±12
7.3
5.9
40
12
22
2.0
1.3
-55 to 150
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
48
74
32
Max
62.5
90
40
R
θ
JL
Symbol
Typ
48
74
32
Max
62.5
90
40
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Avalanche Current
B
Repetitive avalanche energy L=0.3mH
B
A
mJ
°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
A
W
Units
V
V
Parameter
Drain-Source Voltage
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
DSM
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
°C/W
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
R
θ
JA
T
A
=25°C
I
DSM
AO4924
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
Features
FET1
FET2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 9A I
D
=7.3A (V
GS
= 10V)
R
DS(ON)
< 15.8m
<24m
(V
GS
= 10V)
R
DS(ON)
< 19.5m
<29m
(V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
General Description
The AO4924 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost
efficiency further.
Standard Product AO4924 is Pb-free
(meets ROHS & Sony 259 specifications). AO4924L is
a Green Product ordering option. AO4924L and AO4924
are electrically identical.
SRFET
TM
S
oft
R
ecovery MOS
FET
:
Integrated Schottky Diode
G2
S2
G1
S1
D2
D2
D1
D1
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4924_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
| AO4924L | 功能描述:MOSFET 2N-CH 30V 9A/7.3A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:SRFET?? 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個(gè) N 溝道（雙） FET 功能:邏輯電平門 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:- 不同?Id，Vgs 時(shí)的?Rds On（最大值）:15.8 毫歐 @ 9A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:31nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:1885pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4926 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4928 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4930 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
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