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參數(shù)資料
| 型號(hào)： | AOF800L |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對(duì)稱雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 146K |
| 代理商： | AOF800L |
Symbol
V
DS
V
GS
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
Symbol
Units
R
θ
JL
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Typ
47
83
23
Max
62.5
110
40
t
≤
10s
Steady-State
Steady-State
R
θ
JA
°C/W
Parameter: Thermal Characteristics MOSFET Q2
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Typ
Max
t
≤
10s
R
θ
JA
31
40
Steady-State
Steady-State
°C/W
59
16
75
24
Max Q1
30
±20
8.3
6.7
A
13
80
3
2.1
30
2
17.7
T
A
=25°C
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
P
D
Pulsed Drain Current
B
Continuous Drain
Current
A
I
D
W
-55 to 150
-55 to 150
1.28
T
A
=25°C
T
A
=70°C
Gate-Source Voltage
±20
30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Max Q2
AO4F800
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.3A (V
GS
= 10V) I
D
=17.7A
R
DS(ON)
< 18m
< 6.5m
(V
GS
= 10V)
R
DS(ON)
< 27m
< 8.5m
(V
GS
= 4.5V)
General Description
The AO4F800 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters.
Standard Product AOF800 is Pb-free
(meets ROHS & Sony 259 specifications). AOF800L
is a Green Product ordering option. AOF800 and
AOF800L are electrically identical.
SOIC-14
G2
S2
S2
S2
G1
D1
D1
1
2
3
4
5
6
7
14
13
12
11
10
9
8
D2/S1
D2/S1
D2/S1
D2/S1
D2/S1
S1
S1
G1
D1
S1
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
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