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參數(shù)資料
| 型號(hào)： | AOF800L |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對(duì)稱雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 146K |
| 代理商： | AOF800L |
AO4F800
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
0
10
20
30
40
50
60
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
V
GS
=2.5V
3.0V
10V
3.5V
4.5V
0
10
20
30
40
50
60
1
1.5
2
2.5
3
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
10
20
30
40
50
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
=10V
V
GS
=4.5V
0
4
8
12
16
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=17.7A
25°C
125°C
I
D
=17.7A
Alpha & Omega Semiconductor, Ltd.
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| AOFD102N-R | 制造商:IDEC CORPORATION 功能描述:TWTD EXT F-SHRD PB |
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| AOFD110N-G | 制造商:IDEC CORPORATION 功能描述:TWTD EXT F-SHRD PB |
| AOFD110N-R | 制造商:IDEC CORPORATION 功能描述:TWTD EXT F-SHRD PB |
| AOFD110N-S | 制造商:IDEC CORPORATION 功能描述:TWTD EXT F-SHRD PB |
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