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參數資料
| 型號： | AO6404 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | AO6404 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
45
70
33
Max
62.5
110
50
R
θ
JL
Junction and Storage Temperature Range
A
P
D
°C
2
1.28
-55 to 150
T
A
=70°C
I
D
8.6
6.8
30
Pulsed Drain Current
B
Power Dissipation
A
T
A
=25°C
Continuous Drain
Current
A
Maximum
20
Units
V
V
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±12
Gate-Source Voltage
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
t
≤
10s
R
θ
JA
AO6404
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 8.6A (V
GS
= 10V)
R
DS(ON)
< 17m
(V
GS
= 10V)
R
DS(ON)
< 18m
(V
GS
= 4.5V)
R
DS(ON)
< 24m
(V
GS
= 2.5V)
R
DS(ON)
< 33m
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
General Description
The AO6404 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
Standard Product AO6404 is Pb-free (meets ROHS
& Sony 259 specifications). AO6404L is a Green
Product ordering option. AO6404 and AO6404L are
electrically identical.
G
D
S
G
D
D
S
D
D
1
2
3
6
5
4
TSOP-6
Top View
Alpha & Omega Semiconductor, Ltd.
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|---|---|
| AO6404L | N-Channel Enhancement Mode Field Effect Transistor |
| AO6408 | N-Channel Enhancement Mode Field Effect Transistor |
| AO6408L | N-Channel Enhancement Mode Field Effect Transistor |
| AO6414 | N-Channel Enhancement Mode Field Effect Transistor |
| AO6414L | N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| AO6404_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO6404L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO6405 | 功能描述:MOSFET P-CH -30V -5A 6-TSOP RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| AO6405_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO6405L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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