參數資料
型號： AO6414L
廠商： ALPHA
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： N溝道增強型場效應管
文件頁數： 1/4頁
文件大?。?/td> 140K
代理商： AO6414L
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
58
94
37
Max
80
120
50
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
T
A
=70°C
1.1
W
Power Dissipation
T
A
=25°C
P
D
1.56
A
T
A
=70°C
1.9
9
Pulsed Drain Current
B
Continuous Drain
Current
A
T
A
=25°C
I
D
2.3
Drain-Source Voltage
Gate-Source Voltage
55
±12
V
V
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Maximum
Units
AO6414
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 55V
I
D
= 2.4A (V
GS
= 4.5V)
R
DS(ON)
< 1
6
0m
Ω
(V
GS
= 4.5V)
R
DS(ON)
< 200m
Ω
(V
GS
= 2.5V)
General Description
The AO6414 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product
AO6414 is Pb-free (meets
ROHS & Sony 259 specifications). AO6414L is a
Green Product ordering option. AO6414 and
AO6414L are electrically identical.
G
D
D
S
D
D
1
2
3
6
5
4
TSOP-6
Top View
G
D
S
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
PDF描述
AO6415 P-Channel Enhancement Mode Field Effect Transistor
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AO6419 P-Channel Enhancement Mode Field Effect Transistor
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相關代理商/技術參數
參數描述
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