參數(shù)資料
型號(hào): AO6420
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 133K
代理商: AO6420
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
48
74
35
Max
62.5
110
40
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
10s
Steady-State
R
θ
JA
W
T
A
=70°C
1.28
Junction and Storage Temperature Range
-55 to 150
°C
Power Dissipation
T
A
=25°C
P
D
2.00
A
T
A
=70°C
3.4
20
Pulsed Drain Current
B
Continuous Drain
Current
A,F
T
A
=25°C
V
I
D
4.2
Drain-Source Voltage
Gate-Source Voltage
60
±20
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Maximum
Units
V
AO6420
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 60V
I
D
= 4.2A (V
GS
= 10V)
R
DS(ON)
< 60m
(V
GS
= 10V)
R
DS(ON)
< 75m
(V
GS
= 4.5V)
Rg,Ciss,Coss,Crss Tested!
General Description
The AO6420 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AO6420 is Pb-free
(meets ROHS & Sony 259 specifications).
G
D
S
TSOP-6
Top View
G
D
D
S
D
D
1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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