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參數(shù)資料
| 型號： | AO6601 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強模式互補場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 211K |
| 代理商： | AO6601 |
Symbol
V
DS
V
GS
Max p-channel
-30
±12
-2.3
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
Typ
78
106
64
Max
110
150
80
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
-55 to 150
-55 to 150
T
A
=70°C
Power Dissipation
T
A
=25°C
P
D
30
±12
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
3.4
2.7
30
1.15
0.73
-1.8
-30
1.15
0.73
A
T
A
=25°C
T
A
=70°C
I
D
AO6601
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 3.4A
(V
GS
= 10V)
-2.3A
(V
GS
= -10V)
R
DS(ON)
< 60m
(V
GS
= 10V)
< 135m
(V
GS
= -10V)
< 75m
(V
GS
= 4.5V)
< 185m
(V
GS
= -4.5V)
< 115m
(V
GS
= 2.5V)
< 265m
(V
GS
= -2.5V)
General Description
The AO6601 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6601 is Pb-free (meets ROHS &
Sony 259 specifications). AO6601L is a Green
Product ordering option. AO6601 and AO6601L are
electrically identical.
G1
D1
S1
G2
D2
S2
n-channel
p-channel
TSOP6
Top View
G2
S2
G1
D2
S1
D1
1
2
3
6
5
4
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO6601L | Complementary Enhancement Mode Field Effect Transistor |
| AO6602 | Complementary Enhancement Mode Field Effect Transistor |
| AO6602L | Complementary Enhancement Mode Field Effect Transistor |
| AO6603 | Complementary Enhancement Mode Field Effect Transistor |
| AO6603L | Complementary Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO6601_001 | 功能描述:MOSFET N/P-CH 30V 6-TSOP 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:N 和 P 溝道 FET 功能:邏輯電平門 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:3.4A，2.3A 不同?Id，Vgs 時的?Rds On（最大值）:60 毫歐 @ 3.4A，10V 不同 Id 時的 Vgs（th）（最大值）:1.5V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:12nC @ 10V 不同 Vds 時的輸入電容（Ciss）:285pF @ 15V 功率 - 最大值:1.15W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SC-74，SOT-457 供應(yīng)商器件封裝:6-TSOP 標準包裝:1 |
| AO6601_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Complementary MOSFET |
| AO6601L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO6602 | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N/P-CH 30V 3.5A/2.7A 6-Pin TSOP T/R 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N/P-CH COMPL 30V 6-TSOP |
| AO6602_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Complementary MOSFET |
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