- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄375335 > AO6420 (ALPHA) N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AO6420 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | AO6420 |
AO6420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
0
200
400
600
800
0
10
20
30
40
50
60
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.001
10
20
30
40
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
C
oss
C
rss
V
DS
=30V
I
D
= 4.2A
T
J(Max)
=150°C
T
A
=25°C
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
T
on
T
P
D
0.0
0.1
1.0
10.0
100.0
0.01
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
μ
s
10ms
0.1s
1s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
μ
10s
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO6601 | Complementary Enhancement Mode Field Effect Transistor |
| AO6601L | Complementary Enhancement Mode Field Effect Transistor |
| AO6602 | Complementary Enhancement Mode Field Effect Transistor |
| AO6602L | Complementary Enhancement Mode Field Effect Transistor |
| AO6603 | Complementary Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO6420_12 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:60V N-Channel MOSFET |
| AO6422 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO6422_12 | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:20V N-Channel MOSFET |
| AO6422L | 制造商:AOSMD 制造商全稱(chēng):Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AO6424 | 功能描述:MOSFET N-CH 30V 5A 6TSOP RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。