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參數(shù)資料
| 型號： | AO6404 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 115K |
| 代理商： | AO6404 |
AO6404
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
10
25
10
T
J
=55°C
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
μ
A
±12
0.5
30
V
V
A
0.75
1
13.4
16
14.8
18.8
25.5
36
0.73
17
20
18
24
33
T
J
=125°C
m
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
S
V
A
1
2.9
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1810
232
200
1.6
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
17.9
1.5
4.7
2.5
7.2
49
10.8
22
9.8
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
=4.5V, V
DS
=10V, I
D
=8.5A
R
DS(ON)
I
S
=1A,V
GS
=0V
V
GS
=0V, V
DS
=10V, f=1MHz
m
V
GS
=2.5V, I
D
=4A
V
GS
=1.8V, I
D
=3A
V
DS
=5V, I
D
=8A
Maximum Body-Diode Continuous Current
Forward Transconductance
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
μ
A
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=8.5A, dI/dt=100A/
μ
s
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=10V, R
L
=1.2
,
R
GEN
=3
I
F
=8.5A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
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