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參數(shù)資料
| 型號(hào)： | AOF800L |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對(duì)稱(chēng)雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 146K |
| 代理商： | AOF800L |
AO4F800
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
19
24
V
DS
=5V, I
D
=8.8A
180
110
0.7
V
GS
=10V, V
DS
=15V, I
D
=8.8A
V
=10V, V
DS
=15V, R
L
=1.7
GEN
=3
V
GS
=10V
I
F
=8.8A, dI/dt=100A/
μ
s
I
F
=8.8A, dI/dt=100A/
μ
s
20
25
0
5
10
15
20
25
30
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
V
GS
=3V
3.5V
4V
10V
4.5V
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(
10
14
18
22
26
0
5
10
15
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
125°C
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
N
V
GS
=10V
V
GS
=4.5V
10
20
30
40
50
60
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
R
D
)
V
DS
=5V
V
GS
=4.5V
I
D
=8.3A
25°C
I
D
=8.3A
125°C
25°C
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
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