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參數(shù)資料
| 型號(hào)： | AO4932 |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對(duì)稱雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 154K |
| 代理商： | AO4932 |
Symbol
V
DS
V
GS
Max FET1
30
±12
9.0
7.2
40
16
38
2.0
1.3
-55 to 150
Max FET2
30
±20
9.0
7.2
40
16
38
2.0
1.3
-55 to 150
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
48
74
32
Max
62.5
90
40
R
θ
JL
Symbol
Typ
48
74
32
Max
62.5
90
40
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
C
A
mJ
°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
A
W
A
Units
V
V
Parameter
Drain-Source Voltage
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
DSM
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
B
°C/W
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
R
θ
JA
T
A
=25°C
I
DSM
AO4932
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET
TM
Features
FET1
FET2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 9A I
D
=9A (V
GS
= 10V)
R
DS(ON)
< 15.8m
<15.8m
(V
GS
= 10V)
R
DS(ON)
< 19.6m
<23m
(V
GS
= 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
General Description
The AO4932 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4932 is Pb-free
(meets ROHS & Sony 259 specifications).
SRFET
TM
S
oft
R
ecovery MOS
FET
:
Integrated Schottky Diode
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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| AO4944 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4F800 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AOF800L | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO6401 | P-Channel Enhancement Mode Field Effect Transistor |
| AO6401L | P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4932_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
| AO4936 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N-Channel 30-V (D-S) MOSFET |
| AO4938 | 制造商:SHENZHENFREESCALE 制造商全稱:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:30V Dual N-Channel MOSFET |
| AO4940 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4940_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
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