參數(shù)資料
型號(hào): AO4918
廠商: ALPHA
英文描述: Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 非對(duì)稱雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁數(shù): 1/8頁
文件大小: 156K
代理商: AO4918
Symbol
V
DS
V
GS
Max Q2
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
FM
T
J
, T
STG
Gate-Source Voltage
Continuous Drain
Current
A
±20
8.3
30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
W
-55 to 150
-55 to 150
Junction and Storage Temperature Range
2
1.28
1.28
T
A
=25°C
T
A
=70°C
2
A
6.7
40
40
7.4
T
A
=25°C
T
A
=70°C
Power Dissipation
P
D
Pulsed Drain Current
B
I
D
Maximum Schottky
30
3
Max Q1
30
±12
9.3
Units
V
T
A
=25°C
T
A
=70°C
Parameter
Reverse Voltage
Continuous Forward
Current
A
A
2.2
20
2
Pulsed Diode Forward Current
B
P
D
I
F
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Power Dissipation
A
W
1.28
-55 to 150
°C
AO4918
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 9.3A (V
GS
= 10V) I
D
=8.3A (V
GS
= 10V
R
DS(ON)
< 14.5m
<18m
(V
GS
= 10V)
R
DS(ON)
< 16m
<27m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4918 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4918 is Pb-free (meets ROHS &
Sony 259 specifications). AO4918L is a Green Product
ordering option. AO4918 and AO4918L are electrically
identical.
SOIC-8
G1
S1/A
D2
D2
D1/S2/K
D1/S2/K
D1/S2/K
G2
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
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